TDA4VM21 datasheet(196/331 Pages) TI

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Table 6-29. WKUP_OSC0 Crystal Electrical Characteristics (continued)

PARAMETER

MIN

TYP

MAX

UNIT

ESRxtal

Crystal Effective Series Resistance

100

When selecting a crystal, the system design must consider the temperature and aging characteristics of a based

on the worst case environment and expected life expectancy of the system.

Table 6-30 details the switching characteristics of the oscillator and the requirements of the input clock.

Table 6-30. WKUP_OSC0 Switching Characteristics – Crystal Mode

PARAMETER

MIN

TYP

MAX UNIT

CXI

XI Capacitance

1.55

CXO

XO Capacitance

1.35

CXIXO

XI to XO Mutual Capacitance

0.1

Maximum Start-up Time

9.5(1)

(1)

TI strongly encourages each customer to submit samples of the device to the resonator/crystal vendors for validation. The

vendors are equipped to determine what load capacitors will best tune their resonator/crystal to the microcontroller device

for optimum startup and operation over temperature/voltage extremes.

VDDA_WKUP

WKUP_OSC0_XO

Time

VSS

VDDA_WKUP (min.)

VDD_WKUP (min.)

VSS

VDD_WKUP

J7ES_WKUP_OSC_STARTUP_04

Figure 6-24. WKUP_OSC0 Start-up Time

6.9.4.1.1.1 Load Capacitance

The crystal circuit must be designed such that it applies the appropriate capacitive load to the crystal, as defined

by the crystal manufacturer. The capacitive load, CL, of this circuit is a combination of discrete capacitors

CL1, CL2, and several parasitic contributions. PCB signal traces which connect crystal circuit components to

WKUP_OSC0_XI and WKUP_OSC0_XO have parasitic capacitance to ground, CPCBXI and CPCBXO, where the

PCB designer should be able to extract parasitic capacitance for each signal trace. The WKUP_OSC0 circuits

and device package have combined parasitic capacitance to ground, CPCBXI and CPCBXO, where these parasitic

capacitance values are defined in Table 6-30.

TDA4VM-Q1, TDA4VM

SPRSP36K – SEPTEMBER 2021 – REVISED APRIL 2024

www.ti.com

196

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