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29PL256N Datasheet(PDF) 57 Page - SPANSION |
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29PL256N Datasheet(HTML) 57 Page - SPANSION |
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57 / 74 page ![]() June 6, 2007 S29PL-N_00_A5 S29PL-N MirrorBit ™ Flash Family 57 Da ta Shee t (Prelim i nar y ) 11.7 DC Characteristics 11.7.1 DC Characteristics (VCC = 2.7 V to 3.6 V) (CMOS Compatible) Notes 1. The ICC current listed is typically less than 5 mA/MHz, with OE# at VIH. 2. Maximum ICC specifications are tested with VCC =VCC max, TA =TAmax. Typical ICC specifications are with typical VCC=3.0 V, TA = +25°C. 3. ICC is active while Embedded Erase or Embedded Program is in progress. 4. Automatic sleep mode enables the low power mode when addresses remain stable for tACC +30 ns. Typical sleep mode current is 1 µA. 5. Not 100% tested. 6. The data in the table is for VCC range 2.7 V to 3.6 V (recommended for standalone applications). 7. CE1# and CE2# for the PL129N. Parameter Symbol Parameter Description (Notes) Test Conditions Min (Note 2) Typ (Note 2) Max Unit ILI Input Load Current VIN =VSS to VCC, VCC =VCC max (6)±2.0 µA ILO Output Leakage Current VOUT =VSS to VCC, OE# = VIH VCC =VCC max (6) ±1.0 µA ICC1 VCC Active Read Current (1, 3) OE# = VIH, VCC =VCC max (1, 6) 5 MHz 30 45 mA ICC2 VCC Active Write Current (3)OE# = VIH, WE# = VIL 25 50 mA ICC3 VCC Standby Current CE# (7), RESET#, WP#/ACC = VCC ± 0.3 V 20 40 µA ICC4 VCC Reset Current RESET# = VSS ± 0.3 V 300 500 µA ICC5 Automatic Sleep Mode (4)VIH =VCC ±0.3 V; VIL =VSS ± 0.3 V 20 40 µA ICC6 VCC Active Read-While-Write Current (1) OE# = VIH 5 MHz 35 50 mA ICC7 VCC Active Program-While-Erase- Suspended Current (5) OE# = VIH 27 55 mA ICC8 VCC Active Page Read Current OE# = VIH, 8 word Page Read 40 MHz 6 10 mA VIL Input Low Voltage VCC = 2.7 to 3.6 V –0.5 0.8 V VIH Input High Voltage VCC = 2.7 to 3.6 V 2.0 VCC +0.3 V VHH Voltage for ACC Program Acceleration VCC = 3.0 V ±10% (6)8.5 9.5 V VOL Output Low Voltage IOL = 100 µA, VCC =VCC min (6)0.1 V VOH Output High Voltage IOH = –100 µA (6)VCC –0.2 V VLKO Low VCC Lock-Out Voltage (5)2.3 2.5 V |
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