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29PL256N Datasheet(PDF) 25 Page - SPANSION

Part # 29PL256N
Description  256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
PDF  74 Pages
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Manufacturer  SPANSION [SPANSION]
Direct Link  http://www.spansion.com
Logo SPANSION - SPANSION

29PL256N Datasheet(HTML) 25 Page - SPANSION

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June 6, 2007 S29PL-N_00_A5
S29PL-N MirrorBit
™ Flash Family
25
Da ta
Shee t
(Prelim i nar y )
7.4
Program/Erase Operations
These devices are capable of single word or write buffer programming operations which are described in the
following sections. The write buffer programming is recommended over single word programming as it has
clear benefits from greater programming efficiency. See Table 7.1 on page 20 for the correct device settings
required before initiation of a write command sequence.
Note the following details regarding the program/erase operations:
When the Embedded Program algorithm is complete, the device then returns to the read mode.
The system can determine the status of the program operation by using DQ7 or DQ6. See Write Operation
Status on page 37 for information on these status bits.
A 0 cannot be programmed back to a 1. Attempting to do so causes the device to set DQ5 = 1 (halting any
further operation and requiring a reset command). A succeeding read shows that the data is still 0.
Only erase operations can convert a 0 to a 1.
A hardware reset immediately terminates the program operation and the program command sequence
should be reinitiated once the device has returned to the read mode, to ensure data integrity.
Any commands written to the device during the Embedded Program Algorithm are ignored except the
Program Suspend command.
Secured Silicon Sector, Autoselect, and CFI functions are unavailable when a program operation is in
progress.
Programming is allowed in any sequence and across sector boundaries for single word programming
operation.
7.4.1
Single Word Programming
In single word programming mode, four Flash command write cycles are used to program an individual Flash
address. While this method is supported by all Spansion devices, in general it is not recommended for
devices that support Write Buffer Programming. See Table 12.1 on page 66 for the required bus cycles and
Figure 7.1 on page 26 for the flowchart.
When the Embedded Program algorithm is complete, the device then returns to the read mode and
addresses are no longer latched. The system can determine the status of the program operation by using
DQ7 or DQ6. See Write Operation Status on page 37 for information on these status bits.
Single word programming is supported for backward compatibility with existing Flash driver software and use
of write buffer programming is strongly recommended for general programming. The effective word
programming time using write buffer programming is approximately four times faster than the single word
programming time.



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