L9679E datasheet(106/127 Pages) STMICROELECTRONICS

106 / 127 page

Symbol

Parameter

Comments / Conditions

Min

Typ

Max

Unit

ISINK_LO_SR

SRx current sink limit low

LPDIAGREQ(ISRC_CURR_SEL)=1

LPDIAGREQ(ISINK)=1

17.5

IPD_SR_L

SRx current pull-down

SYS_CTL(PD&VRCM_SEL) = 0

0.7

1.3

IPD_SR_H

SRx current pull-down

SYS_CTL(PD&VRCM_SEL) = 1

4.5

7.5

RLKG_SF

SFx leakage resistance

Design info

kΩ

VLKG_SF

SFx leakage voltage source

Design info

-1

RSQ_ACC

Squib/Pyroswitch resistance

measurement accuracy

After software calculation. All errors included RSQ

between 1.0 Ω and 10.0 Ω With High Current Source

(40 mA)

-8%

EMI Input Low-pass filter

Design Info

100

kHz

13.8.2

Squib/Pyroswitch leakage test (VRCM)

All electrical characteristics are valid for the following conditions unless otherwise noted:

-40 °C ≤ Tamb ≤ +105 °C

VSAT_ON(max) ≤ VSAT ≤ VSAT(max)

Table 30. Squib/Pyroswitch leakage test (VRCM)

Symbol

Parameter

Comments / Conditions

Min

Typ Max Unit

VOUT_VRCM_0

Output voltage on SF or SR pins

during leakage test

IOUT = 0 mA

-10%

2.5 +10%

VOUT_VRCM

IOUT = 6.6 mA

1.9

2.5

RLKG_GSG_TH

Detection threshold, leakage to

GND

Leakage detected if RLKG_GSG ≤ 1 kΩ and not detected

if RLKG_GSG ≥ 10 kΩ

Design info

kΩ

ILKG_GSQ_TH_L

Detection threshold, leakage to

GND

Equivalent to resistance range

SYS_CTL(PD&VRCM_SEL) = 0 -25 °C ≤ Tj ≤ +150 °C

guaranteed by design/characterization

-15.5% 450 +20%

µA

Equivalent to resistance range

SYS_CTL(PD&VRCM_SEL) = 0 -40 °C ≤ Tj ≤ +150 °C

-17%

450 +20%

µA

ILKG_GSQ_TH_H

Detection threshold, leakage to

GND

SYS_CTL(PD&VRCM_SEL) = 1

-15%

15%

TFLT_LKG_G

Leakage to GND deglitch filter

time

µs

RLKG_BSQ_TH

Detection threshold, leakage to

battery

Leakage detected if RLKG_GSG ≤ 1 kΩ and not detected

if RLKG_GSG ≥ 10 kΩ

Design info

kΩ

ILKG_BSQ_TH

Equivalent to resistance range -25 °C ≤ Tj ≤ +150 °C

guaranteed by design/characterization

-12%

1.8 +15% mA

-40 °C ≤ Tj ≤ +150 °C

-12%

1.8 +20% mA

TFLT_LKG_B

Leakage to BAT deglitch filter time -

µs

ILIM_VRCM_SRC

VRCM current limitation

-20

-10

ILIM_VRCM_SINK

VRCM current limitation

VSHIFT

External ground or battery shift

Design info

-1

RSQ_LOW_TH

Detection Threshold for

“resistance too low”

Design Info

200

500

L9679E

Electrical characteristics

DS12485 - Rev 8

page 106/127

L9679E Datasheet(PDF) 106 Page - STMicroelectronics

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