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SCM3000C Datasheet(PDF) 25 Page - Sanken electric |
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SCM3000C Datasheet(HTML) 25 Page - Sanken electric |
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25 / 41 page ![]() SCM3000C Series SCM3000C-DSE Rev.1.2 SANKEN ELECTRIC CO., LTD. 25 Aug. 21, 2017 http://www.sanken-ele.co.jp/en © SANKEN ELECTRIC CO., LTD. 2016 may be occurred due to creases at screw tightening. Therefore, you should conduct thorough evaluations before using these materials. ● When applying a silicone grease, make sure that there must be no foreign substances between the IC and a heatsink. Extreme care should be taken not to apply a silicone grease onto any device pins as much as possible. The following requirements must be met for proper grease application: - Grease thickness: 100 µm - Heatsink flatness: ±100 µm - Apply silicone grease within the area indicated in Figure 13-2, below. Heatsink Thermal silicone grease application area 3.0 3.0 29.0 Unit: mm 7.8 8.0 M3 M3 Screw hole Screw hole (Pin 1) Figure 13-2. Reference Application Area for Thermal Silicone Grease 13.3. Considerations in IC Characteristics Measurement When measuring the breakdown voltage or leakage current of the transistors incorporated in the IC, note that all of the output (U, V, and W), LSx, and COM pins must be appropriately connected. Otherwise the switching transistors may result in permanent damage. The following are circuit diagrams representing typical measurement circuits for breakdown voltage: Figure 13-3 shows the high-side transistor (Q1H) in the U phase; Figure 13-4 shows the low-side transistor (Q1L) in the U phase. When measuring the high-side transistors, leave all the pins not be measured open. When measuring the low-side transistors, connect the LSx pin to be measured to the COM pin, then leave other unused pins open. COM V W U VBB V LS3 LS2 LS1 17 16 MIC 22 21 20 19 18 3 Figure 13-3. Typical Measurement Circuit for High-side Transistor (Q1H) in U-phase COM V W U VBB V LS3 LS2 LS1 17 16 MIC 22 21 20 19 18 3 Figure 13-4. Typical Measurement Circuit for Low-side Transistor (Q1L) in U-phase |
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