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32C83 Datasheet(PDF) 60 Page - Renesas Technology Corp |
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32C83 Datasheet(HTML) 60 Page - Renesas Technology Corp |
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60 / 94 page  Page 60 1 9 f o 6 0 0 2 , 1 3 . n a J 1 4 . 1 . v e R 1 4 1 0 - 3 1 0 0 B 3 0 J E R ) T 3 8 / C 2 3 M , 3 8 / C 2 3 M ( p u o r G 3 8 / C 2 3 M BCLK DW DB MAi th(RAS-RAD)=(tcyc/2-13)ns.min tRP=(tcyc/2 x 3-20)ns.min tsu(DB-CAS)=(tcyc-20)ns.min Vcc=5V RAS CASL CASH Hi-Z th(BCLK-DB) -7ns.min 18ns.max th(BCLK-CAD) -3ns.min tcyc td(BCLK-RAD) th(BCLK-RAD) -3ns.min 18ns.max td(BCLK-CAD) 18ns.max td(BCLK-RAS) 18ns.max td(BCLK-CAS) th(RAS-RAD)(1) tRP(1) 18ns.max td(BCLK-DW) tsu(DB-CAS)(1) th(BCLK-RAS) -3ns.min th(BCLK-CAS) -3ns.min th(BCLK-DW) -5ns.min Row address Column address NOTES: 1. Varies with operation frequency: Measurement Conditions: • VCC=4.2 to 5.5V • Input high and low voltage: VIH=2.5V, VIL=0.8V • Output high and low voltage: VOH=2.0V, VOL=0.8V Write Timing Memory Expansion Mode and Microprocessor Mode (When accessing the DRAM area) Figure 5.6 VCC=5V Timing Diagram (5) |
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