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32C83 Datasheet(PDF) 75 Page - Renesas Technology Corp |
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32C83 Datasheet(HTML) 75 Page - Renesas Technology Corp |
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75 / 94 page ![]() Page 75 1 9 f o 6 0 0 2 , 1 3 . n a J 1 4 . 1 . v e R 1 4 1 0 - 3 1 0 0 B 3 0 J E R ) T 3 8 / C 2 3 M , 3 8 / C 2 3 M ( p u o r G 3 8 / C 2 3 M BCLK CSi 18ns.max ADi 18ns.max RD 18ns.max -3ns.min th(BCLK-AD) 0ns.min 0ns.min BHE ADi /DBi 0ns.min 18ns.max 0ns.min BCLK CSi 18ns.max ADi 18ns.max 0ns.min 0ns.min tcyc BHE ADi /DBi Data output WR,WRL, WRH Address Address Data input 30ns.min td(BCLK-RD) th(WR-CS)(1) Address td(AD-ALE)(1) Address tsu(DB-BCLK) tac3(RD-DB)(1) tdz(RD-AD) 8ns.max ALE -2ns.min td(BCLK-ALE) 18ns.max ALE -2ns.min td(BCLK-ALE) th(ALE-AD)(1) Vcc=3.3V td(BCLK-CS) td(AD-ALE)(1) th(ALE-AD)(1) th(BCLK-RD) th(RD-AD)(1) th(RD-DB) td(BCLK-AD) th(BCLK-CS) th(RD-CS)(1) td(BCLK-WR) th(BCLK-WR) td(BCLK-CS) td(BCLK-AD) th(BCLK-AD) th(BCLK-CS) th(WR-AD)() td(DB-WR)(1) th(WR-DB)(1) th(BCLK-ALE) th(BCLK-ALE) tcyc NOTES: 1. Varies with operation frequency. td(AD-ALE)=(tcyc/2-20)ns.min th(ALE-AD)=(tcyc/2-10)ns.min, th(WR-AD)=(tcyc/2-10)ns.min th(WR-CS)=(tcyc/2-10)ns.min, th(WR-DB)=(tcyc/2-10)ns.min td(DB-WR)=(tcyc/2 x m-25)ns.min (m=3 with 2 wait states and m=5 with 3 wait states) Measurement Conditions: • VCC=3.0 to 3.6V • Input high and low voltage: VIH=1.5V, VIL=0.5V • Output high and low voltage: VOH=1.5V, VOL=1.5V NOTES: 1. Varies with operation frequency. td(AD-ALE)=(tcyc/2-20)ns.min th(ALE-AD)=(tcyc/2-10)ns.min, th(RD-AD)=(tcyc/2-10)ns.min, th(RD-CS)=(tcyc/2-10)ns.min tac3(RD-DB)=(tcyc/2 x m-35)ns.max (m=3 with 2 wait states and m=5 with 3 wait states) tac3(AD-DB)=(tcyc/2 x n-35)ns.max (n=5 with 2 wait states and n=7 with 3 wait states) Read Timing Write Timing Memory Expansion Mode and Microprocessor Mode (with a wait state, when accessing an external memory and using the multiplexed bus) 18ns.max tac3(AD-DB)(1) Figure 5.12 VCC=3.3V Timing Diagram (3) |
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