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32C83 Datasheet(PDF) 74 Page - Renesas Technology Corp |
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32C83 Datasheet(HTML) 74 Page - Renesas Technology Corp |
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74 / 94 page ![]() Page 74 1 9 f o 6 0 0 2 , 1 3 . n a J 1 4 . 1 . v e R 1 4 1 0 - 3 1 0 0 B 3 0 J E R ) T 3 8 / C 2 3 M , 3 8 / C 2 3 M ( p u o r G 3 8 / C 2 3 M BCLK ALE 18ns.max -2ns.min RD 18ns.max -3ns.min Hi-Z DB 0ns.min 0ns.min td(BCLK-ALE) th(BCLK-ALE) td(BCLK-RD) 30ns.min(1) tac2(RD-DB)(2) CSi td(BCLK-CS) 18ns.max(1) ADi 18ns.max(1) th(BCLK-AD) 0ns.min th(BCLK-CS) 0ns.min BHE tcyc td(BCLK-AD) tac2(AD-DB)(2) WR,WRL, WRH 18ns.max 0ns.min BCLK CSi 18ns.max ADi 18ns.max 0ns.min 0ns.min tcyc BHE DBi td(BCLK-WR) ALE 18ns.max -2ns.min Vcc=3.3V th(BCLK-RD) th(RD-DB) th(RD-AD) tsu(DB-BCLK) th(RD-CS) 0ns.min th(BCLK-WR) td(BCLK-CS) td(BCLK-AD) td(BCLK-ALE) th(BCLK-AD) th(BCLK-CS) th(WR-CS)(1) td(DB-WR)(1) th(WR-DB)(1) th(WR-AD)(1) td(DB-WR)=(tcyc x n-20)ns.min (n=1 with 1 wait state, n=2 with 2 wait states and n=3 with 3 wait states) th(WR-DB)=(tcyc/2-10)ns.min th(WR-AD)=(tcyc/2-10)ns.min th(WR-CS)=(tcyc/2-10)ns.min tw(WR)=(tcyc/2 x n-15)ns.min (n=1 with 1 wait state, n=3 with 2 wait states and n=5 with 3 wait states) NOTES: 1. Varies with operation frequency. Measurement Conditions: • VCC=3.0 to 3.6V • Input high and low voltage: VIH=1.5V, VIL=0.5V • Output high and low voltage: VOH=1.5V, VOL=1.5V NOTES: 1. Values guaranteed only when the microcomputer is used independently. A maximum of 35ns is guaranteed for td(BCLK-AD)+tsu(DB-BCLK). 2. Varies with operation frequency. tac2(RD-DB)=(tcyc/2 x m-35)ns.max (m=3 with 1 wait state, m=5 with 2 wait states and m=7 with 3 wait states) tac2(AD-DB)=(tcyc x n-35)ns.max (n=2 with 1 wait state, n=3 with 2 wait states and n=4 with 3 wait states) th(BCLK-ALE) Read Timing Write Timing Memory Expansion Mode and Microprocessor Mode (with a wait state) tw(WR)(1) Figure 5.11 VCC=3.3V Timing Diagram (2) |
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