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SE97TP Datasheet(PDF) 36 Page - NXP Semiconductors |
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SE97TP Datasheet(HTML) 36 Page - NXP Semiconductors |
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36 / 55 page ![]() SE97_7 © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 07 — 29 January 2010 36 of 55 NXP Semiconductors SE97 DDR memory module temp sensor with integrated SPD, 3.3 V 9.1 SE97 in memory module application Figure 25 shows the SE97 being placed in the memory module application. The SE97 is centered in the memory module to monitor the temperature of the DRAM and also to provide a 2-kbit EEPROM as the Serial Presence Detect (SPD). In the event of overheating, the SE97 triggers the EVENT output and the memory controller throttles the memory bus to slow the DRAM. The memory controller can also read the SE97 and watch the DRAM thermal behavior, taking preventive measures when necessary. 9.2 Layout consideration The SE97 does not require any additional components other than the host controller to read its temperature. It is recommended that a 0.1 μF bypass capacitor between the V DD and VSS pins is located as close as possible to the power and ground pins for noise protection. 9.3 Thermal considerations In general, self-heating is the result of power consumption and not a concern, especially with the SE97, which consumes very low power. In the event the SDA and EVENT pins are heavily loaded with small pull-up resistor values, self-heating affects temperature accuracy by approximately 0.5 °C. Equation 1 is the formula to calculate the effect of self-heating: (1) where: ΔT = T j − Tamb Tj = junction temperature Tamb = ambient temperature Rth(j-a) = package thermal resistance VDD = supply voltage IDD(AV) = average supply current Fig 25. System application 002aac800 SE97 EVENT DIMM DRAM DRAM DRAM DRAM MEMORY CONTROLLER SMBus CPU ΔTR th j-a () V DD I DD AV () × () V OL SDA () I OL k sin () SDA () × () V OL EVENT () I OL k sin ()EVENT × () ++ [ ] × = |
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