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SE97TP Datasheet(PDF) 39 Page - NXP Semiconductors

Part # SE97TP
Description  DDR memory module temp sensor with integrated SPD, 3.3 V
PDF  55 Pages
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

SE97TP Datasheet(HTML) 39 Page - NXP Semiconductors

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SE97_7
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 07 — 29 January 2010
39 of 55
NXP Semiconductors
SE97
DDR memory module temp sensor with integrated SPD, 3.3 V
[1]
High-voltage input voltage applied to pin A0 during RWP and CRWP operations. The JEDEC specification is 7 V (min.) and 10 V (max.),
but since the SE97 EEPROM write works only down to 3.0 V, the condition of VI(ov) >4.8 V+VDD or > 4.8 V + 3.0 V was applied and the
minimum voltage changed to 7.8 V. If VDD is 3.6 V then the minimum voltage is 8.4 V.
Table 29.
DC characteristics
VDD = 1.7 V to 3.6 V; Tamb = 40 °C to +125 °C; unless otherwise specified. These specifications are guaranteed by design.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
IDD(AV)
average supply current
SMBus inactive
-
250
400
μA
Isd(VDD)
supply voltage shutdown mode
current
SMBus inactive
-
0.1
5.0
μA
VIH
HIGH-level input voltage
SCL, SDA;
VDD = 3.0 V to 3.6 V
0.7
× V
DD
-VDD +1
V
VIL
LOW-level input voltage
SCL, SDA;
VDD = 3.0 V to 3.6 V
--
0.3
× V
DD
V
VOL1
LOW-level output voltage 1
VDD =3.0 V; IOL =3 mA
-
-
0.4
V
VOL2
LOW-level output voltage 2
VDD =1.7 V; IOL =1.5 mA
-
-
0.5
V
VI(ov)
overvoltage input voltage
pin A0; VI(ov) − VDD >4.8 V
[1] 7.8
-
10
V
VPOR
power-on reset voltage
power supply rising
-
-
1.7
V
power supply falling
SE97PW, SE97TK
0.1
-
-
V
SE97TL, SE97TP
0.6
-
-
V
IOL(sink)EVENT LOW-level output sink current on
pin EVENT
VOL1 =0.4 V
SE97PW, SE97TK
2
-
-
mA
SE97TL, SE97TP
6
-
-
mA
IOL(sink)(SDA)
LOW-level output sink current on
pin SDA
VOL2 =0.5 V
3
-
-
mA
ILOH
HIGH-level output leakage current
EVENT; VOH =VDD
−1.0
-
+1.0
μA
ILIH
HIGH-level input leakage current
SDA, SCL; VI =VDD
−1.0
-
+1.0
μA
ILIL
LOW-level input leakage current
SDA, SCL; VI =VSS
−1.0
-
+1.0
μA
A0, A1, A2; VI =VSS
−1.0
-
+1.0
μA
Ci(SCL/SDA)
SCL and SDA input capacitance
-
5
10
pF
IL
leakage current
on A0, A1, A2
-
1
-
μA
Ipd
pull-down current
internal; A0, A1, A2 pins;
VI =0.3VDD to VDD
--
4.0
μA
ZIL
LOW-level input impedance
pins A0, A1, A2; VI <0.3VDD
30
-
-
k
Ω
ZIH
HIGH-level input impedance
pins A0, A1, A2
800
-
-
k
Ω



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