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MAX793_EPE Datasheet(PDF) 14 Page - Maxim Integrated Products |
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MAX793_EPE Datasheet(HTML) 14 Page - Maxim Integrated Products |
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14 / 20 page ![]() 3.0V/3.3V Adjustable Microprocessor Supervisory Circuits 14 ______________________________________________________________________________________ The power-fail comparator turns off and PFO goes low when VCC falls below VSW on power-down. During the first half of the reset timeout period (tRP), PFO is forced high, irrespective of VPFI. At the beginning of the sec- ond half of tRP, the power-fail comparator is enabled and PFO follows PFI. If the comparator is unused, con- nect PFI to VCC and leave PFO unconnected. PFO can be connected to MR so that a low voltage on PFI gener- ates a reset (Figure 12b). In this configuration, when the monitored voltage causes PFI to fall below VPFT, PFO pulls MR low, causing a reset to be asserted. Reset remains asserted as long as PFO holds MR low, and for 200ms after PFO pulls MR high when the moni- tored supply is above the programmed threshold. Backup-Battery Switchover In the event of a brownout or power failure, it may be necessary to preserve the contents of RAM. With a backup battery installed at BATT, the devices automati- cally switch RAM to backup power when VCC falls. In order to allow the backup battery (e.g., a 3.6V lithium cell) to have a higher voltage than VCC, this family of µP supervisors (designed for 3.3V and 3V systems) does not always connect BATT to OUT when VBATT is greater than VCC. BATT connects to OUT (through a 140 Ω switch) either when VCC falls below VSW and VBATT is greater than VCC, or when VCC falls below 1.75V (typ) regardless of the BATT voltage. Switchover at VSW ensures that battery-backup mode is entered before VOUT gets too close to the 2.0V mini- mum required to reliably retain data in most CMOS RAM, (switchover at higher VCC voltages would decrease backup-battery life). When VCC recovers, switchover is deferred either until VCC crosses VBATT if VBATT is below VRST, or when VCC rises above the reset threshold (VRST) if VBATT is above VRST. This power-up switchover technique prevents VCC from charging the backup battery through OUT when using an external transistor driven by BATT ON. OUT con- nects to VCC through a 4 Ω (max) PMOS power switch when VCC crosses the reset threshold (Figure 13). BATT ON (MAX793/MAX794) BATT ON is high when OUT is connected to BATT. Although BATT ON can be used as a logic output to indicate the battery switchover status, it is most often used as a gate or base drive for an external pass tran- sistor for high-current applications (see Driving an External Switch with BATT ON in the Applications Information section). When VCC exceeds VRST on power-up, BATT ON sinks 3.2mA at 0.4V. In battery- backup mode, this terminal sources 100µA from BATT. MAX793 MAX794 VCC GND PFI PFO R1 R2 VIN 0V VIN PFO VTRIP VL VPFT = 1.237V VPFH = 10mV WHERE 3.0V OR 3.3V VTRIP = R2 + R1 1 ) ( R2 1 – R1 VCC (VPFT + VPFH) VL = R2 + R1 1 ) ( R2 1 – R1 VCC (VPFT) NOTE: VTRIP, VL ARE NEGATIVE VCC MAX793 MAX794 VCC GND PFI PFO R1 R2 PFO VTRIP VH 3.0V OR 3.3V VIN VTRIP = ) ( R2 R1 + R2 VPFT VH = (VPFT + VPFH) VCC VIN MR (b) (a) ) ( R2 R1 + R2 Figure 12. Using the Power-Fail Comparator to Monitor an Additional Power Supply: (a) VIN Is Negative, (b) VIN Is Positive |
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