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MAX793_EPE Datasheet(PDF) 14 Page - Maxim Integrated Products

Part # MAX793_EPE
Description  3.0V/3.3V Adjustable Microprocessor Supervisory Circuits
PDF  20 Pages
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Manufacturer  MAXIM [Maxim Integrated Products]
Direct Link  https://www.maximintegrated.com/en.html
Logo MAXIM - Maxim Integrated Products

MAX793_EPE Datasheet(HTML) 14 Page - Maxim Integrated Products

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3.0V/3.3V Adjustable Microprocessor
Supervisory Circuits
14
______________________________________________________________________________________
The power-fail comparator turns off and PFO goes low
when VCC falls below VSW on power-down. During the
first half of the reset timeout period (tRP), PFO is forced
high, irrespective of VPFI. At the beginning of the sec-
ond half of tRP, the power-fail comparator is enabled
and PFO follows PFI. If the comparator is unused, con-
nect PFI to VCC and leave PFO unconnected. PFO can
be connected to MR so that a low voltage on PFI gener-
ates a reset (Figure 12b). In this configuration, when
the monitored voltage causes PFI to fall below VPFT,
PFO pulls MR low, causing a reset to be asserted.
Reset remains asserted as long as PFO holds MR low,
and for 200ms after PFO pulls MR high when the moni-
tored supply is above the programmed threshold.
Backup-Battery Switchover
In the event of a brownout or power failure, it may be
necessary to preserve the contents of RAM. With a
backup battery installed at BATT, the devices automati-
cally switch RAM to backup power when VCC falls. In
order to allow the backup battery (e.g., a 3.6V lithium
cell) to have a higher voltage than VCC, this family of µP
supervisors (designed for 3.3V and 3V systems) does
not always connect BATT to OUT when VBATT is
greater than VCC. BATT connects to OUT (through a
140
Ω switch) either when VCC falls below VSW and
VBATT is greater than VCC, or when VCC falls below
1.75V (typ) regardless of the BATT voltage.
Switchover at VSW ensures that battery-backup mode is
entered before VOUT gets too close to the 2.0V mini-
mum required to reliably retain data in most CMOS
RAM, (switchover at higher VCC voltages would
decrease backup-battery life). When VCC recovers,
switchover is deferred either until VCC crosses VBATT if
VBATT is below VRST, or when VCC rises above the
reset threshold (VRST) if VBATT is above VRST. This
power-up switchover technique prevents VCC from
charging the backup battery through OUT when using
an external transistor driven by BATT ON. OUT con-
nects to VCC through a 4
Ω (max) PMOS power switch
when VCC crosses the reset threshold (Figure 13).
BATT ON (MAX793/MAX794)
BATT ON is high when OUT is connected to BATT.
Although BATT ON can be used as a logic output to
indicate the battery switchover status, it is most often
used as a gate or base drive for an external pass tran-
sistor for high-current applications (see
Driving an
External Switch with BATT ON in the Applications
Information section). When VCC exceeds VRST on
power-up, BATT ON sinks 3.2mA at 0.4V. In battery-
backup mode, this terminal sources 100µA from BATT.
MAX793
MAX794
VCC
GND
PFI
PFO
R1
R2
VIN
0V
VIN
PFO
VTRIP
VL
VPFT = 1.237V
VPFH = 10mV
WHERE
3.0V OR 3.3V
VTRIP = R2
+
R1
1
)
(
R2
1
–
R1
VCC
(VPFT + VPFH)
VL = R2
+
R1
1
)
(
R2
1
–
R1
VCC
(VPFT)
NOTE: VTRIP, VL ARE NEGATIVE
VCC
MAX793
MAX794
VCC
GND
PFI
PFO
R1
R2
PFO
VTRIP
VH
3.0V OR 3.3V
VIN
VTRIP =
)
(
R2
R1
+ R2
VPFT
VH = (VPFT + VPFH)
VCC
VIN
MR
(b)
(a)
)
(
R2
R1
+ R2
Figure 12. Using the Power-Fail Comparator to Monitor an Additional Power Supply: (a) VIN Is Negative, (b) VIN Is Positive



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