LPC1313 datasheet(42/62 Pages) NXP

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LPC1311_13_42_43

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Product data sheet

Rev. 3 — 10 August 2010

42 of 62

NXP Semiconductors

LPC1311/13/42/43

32-bit ARM Cortex-M3 microcontroller

10. Dynamic characteristics

10.1 Flash memory

[1]

Number of program/erase cycles.

[2]

Programming times are given for writing 256 bytes from RAM to the flash. Data must be written to the flash in blocks of 256 bytes.

10.2 External clock

[1]

Parameters are valid over operating temperature range unless otherwise specified.

[2]

Typical ratings are not guaranteed. The values listed are at room temperature (25

°C), nominal supply voltages.

Table 11.

Flash characteristics

Tamb =

−40 °C to +85 °C, unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Nendu

endurance

[1] 10000

cycles

tret

retention time

powered

years

unpowered

years

ter

erase time

sector or multiple

consecutive sectors

100

105

tprog

programming time

[2] 0.95

1.05

Table 12.

Dynamic characteristic: external clock

Tamb =

−40 °C to +85 °C; VDD over specified ranges.[1]

Symbol

Parameter

Conditions

Min

Typ[2]

Max

Unit

fosc

oscillator frequency

MHz

Tcy(clk)

clock cycle time

1000

tCHCX

clock HIGH time

Tcy(clk)

× 0.4

tCLCX

clock LOW time

Tcy(clk)

× 0.4

tCLCH

clock rise time

tCHCL

clock fall time

Fig 20. External clock timing (with an amplitude of at least Vi(RMS) = 200 mV)

tCHCL

tCLCX

tCHCX

Tcy(clk)

tCLCH

002aaa907

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