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TDA18211HD Datasheet(PDF) 14 Page - NXP Semiconductors |
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TDA18211HD Datasheet(HTML) 14 Page - NXP Semiconductors |
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14 / 66 page ![]() TDA18211HD_5 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 05 — 2 June 2009 14 of 66 NXP Semiconductors TDA18211HD DVB-T Silicon Tuner IC 9.3.4 Description of power level byte (read mode) There are 9 power level bits, dispatched in byte 2 and 3. They indicate the composite voltage gain of the LNA, the loaded attenuator voltage gain, and the level at the input of the RF AGC. 5 TM_RANGE R/W temperature range selection for the internal die sensor (see Table 50) 192 °C to 122 °C 0* 60 °C to 90 °C 4 TM_ON R/W 1 enables die temperature measurement (see Table 50) 0* disables die temperature measurement (see Table 50) 3 to 0 TM_D[3:0] R XXXX data from die temperature measurement (see Table 50) Table 11. TM - Thermo byte (subaddress 01h) bit description …continued Legend: * power-on reset value Bit Symbol Access Value Description Table 12. PL - Power level (address 02h and 03h) bit description Legend: * power-on reset value Address Register Bit Symbol Access Value Description 03h EP1 7 POWER_LEVEL[8] R AGC2 gain, attenuator voltage gain included load, the attenuator load is 50 Ω (explaining the maximum gain of −6 dB) 02h PL 7 POWER_LEVEL[7] R 00 −15 dB 01 −12 dB 10 −9 dB 11 −6 dB 6 to 5 POWER_LEVEL[6:5] R AGC1 gain, LNA voltage gain, the LNA voltage gain assumes a 75 Ω source impedance and a low output impedance 00 6 dB 01 9 dB 10 12 dB 11 15 dB 4 to 0 POWER_LEVEL[4:0] R sensed level at the input of the RF AGC, detector slope is −1 dB/step 0 0000 103 dB µV (RMS value) 0 0001 102 dB µV (RMS value) ... ... 1 1110 73 dB µV (RMS value) 1 1111 72 dB µV (RMS value) |
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