SE98ATP datasheet(29/43 Pages) NXP

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SE98A_4

Product data sheet

Rev. 04 — 25 November 2009

29 of 43

NXP Semiconductors

SE98A

DDR memory module temp sensor, 1.7 V to 3.6 V

IOL(sink)(SDA) = SDA output current LOW

IOL(sink)EVENT = EVENT output current LOW

10. Limiting values

11. Characteristics

Table 24.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VDD

supply voltage

−0.3

+4.2

voltage on any other pin

SDA, SCL, EVENT pins

−0.3

+4.2

VA0

voltage on pin A0

overvoltage input; A0 pin

−0.3

+12.5

Isink

sink current

at SDA, SCL, EVENT pins

−1+50.0

Tj(max)

maximum junction temperature

150

°C

Tstg

storage temperature

−65

+165

°C

Table 25.

Characteristics

VDD = 1.7 V to 3.6 V; Tamb = −40 °C to +125 °C; unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Tacc

temperature accuracy

B grade temperature accuracy;

VDD = 1.7 V to 3.6 V

Tamb =75 °Cto 95 °C

−1.0

±0.5

+1.0

°C

Tamb =40 °Cto 125 °C

−2.0

±1+2.0

°C

Tamb = −40 °C to +125 °C

−3.0

±2+3.0

°C

Tres

temperature resolution

0.125

°C

IDD(AV)

average supply current

250

400

μA

IDD(stb)

standby supply current

SMBus inactive

0.1

μA

Tconv

conversion period

100

120

Ef(conv)

conversion rate error

percentage error in programmed

data

−30

+30

ILIL

LOW-level input leakage current pins A0, A1, A2; VI =VSS

−1.0

+1.0

μA

Ipd

pull-down current

internal; pins A0, A1, A2;

VI =0.3VDD to VDD

0.05

4.0

μA

ZIL

LOW-level input impedance

pins A0, A1, A2; VI <0.3VDD

ZIH

HIGH-level input impedance

pins A0, A1, A2; VI ≥ 0.3VDD

800

VDD

supply voltage

1.7

1.8 or 2.5

or 3.3

3.6

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