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LPC1786 Datasheet(PDF) 80 Page - NXP Semiconductors |
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LPC1786 Datasheet(HTML) 80 Page - NXP Semiconductors |
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80 / 117 page ![]() LPC178X_7X All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Objective data sheet Rev. 2 — 27 May 2011 80 of 117 NXP Semiconductors LPC178x/7x 32-bit ARM Cortex-M3 microcontroller 11. Dynamic characteristics 11.1 Flash memory [1] Number of program/erase cycles. [2] Programming times are given for writing 256 bytes from RAM to the flash. Data must be written to the flash in blocks of 256 bytes. Table 13. Flash characteristics Tamb = 40 C to +85 C, unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Nendu endurance [1] 10000 100000 - cycles tret retention time powered 10 - - years unpowered 20 - - years ter erase time sector or multiple consecutive sectors 95 100 105 ms tprog programming time [2] 0.95 1 1.05 ms Table 14. EEPROM characteristics Tamb = 40 Cto+85 C; VDD(REG)(3V3) = 2.7 V to 3.6 V. Symbol Parameter Conditions Min Typ Max Unit fclk clock frequency 200 375 400 kHz Nendu endurance 100000 500000 - cycles tret retention time powered 10 - - years unpowered 10 - - years |
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