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UM0428 Datasheet(PDF) 6 Page - STMicroelectronics |
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UM0428 Datasheet(HTML) 6 Page - STMicroelectronics |
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6 / 27 page ![]() STG3P2M10N60B power module characteristics UM0428 6/27 Warning: Do not touch the design boards after disconnection from the voltage supply, as several parts and power terminals which contain possibly energized capacitors need to be allowed to discharge. 3 STG3P2M10N60B power module characteristics The STG3P2M10N60B is a 1-phase bridge rectifier plus a 3-phase inverter IGBT all included inside a SEMITOP®2 module. Figure 3. Power module ● VCES = 600 V ● IC = 10 A at 80 ° ● VCE(sat)(max) < 2.5 V at IC=7 A TS=25 °C 3.1 General features ● N-channel very fast PowerMESH™ IGBT ● Lower on-voltage drop VCE(sat) ● Lower CRES / CIES ratio (no cross-conduction susceptibility) ● Very soft ultra fast recovery antiparallel diode ● High frequency operation up to 70 KHz ● New generation products with tighter parameter distribution ● Compact design ● Semitop®2 is a trademark of Semikron |
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