Parameter

Symbol

Value

Units

Min

Typ

Max

Power Supply Voltage

V

CC

-0.3

3.0

V

V

DD

V

CC

V

CC

V

Voltage on any pin with GND =V

V

i

-0.3

V

V

Storage Temperature Range

T

s

-65

+150

˚C

Lead Temperature (Solder 4 sec.)

T

L

+260

˚C

Recommended Operating Conditions

Parameter

Symbol

Value

Units

Min

Typ

Max

Power Supply Voltage (Note 1)

V

CC

2.25

2.75

V

V

DD

V

CC

V

CC

V

Operating Temperature

T

A

-40

+85

˚C

Note 1: “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur. "Recommended Operating Conditions" indicate conditions for

which the device is intended to be functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical

Characteristics. The guaranteed specifications apply only for the test conditions listed. Note also that these maximum ratings imply that the voltage at all the power

be done at ESD-free workstations.

≤ T

A

≤ +85˚C unless otherwise specified)

Symbol

Parameter

Conditions

Value

Units

Min

Typ

Max

Icc PARAMETERS

I

Power Supply Current, RF

Synthesizer

IF PLL OFF

RF PLL ON

Charge Pump TRI-STATE

OSC=0

3.6

5.7

mA

I

Power Supply Current, IF

Synthesizer

IF PLL ON

RF PLL OFF

Charge Pump TRI-STATE

OSC=0

2.0

2.7

mA

I

Power Supply Current,

Entire Synthesizer

IF PLL ON

RF PLL ON

Charge Pump TRI-STATE

OSC=0

5.6

8.5

mA

I

Power Down Current

EN = ENOSC = 0V

CLK, DATA, LE = 0V

115

µA

RF SYNTHESIZER PARAMETERS

f

FinRF

Operating Frequency

500

3600

MHz

p

FinRF

Input Sensitivity

-15

0

dBm

f

COMP

Phase Detector Frequency

50

MHz

I

RF Charge Pump Source

Current

RF_CPG = 0

V

100

µA

RF_CPG = 1

V

200

µA

...

...

µA

RF_CPG = 15

V

1600

µA

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