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AD9259 Datasheet(PDF) 24 Page - Analog Devices |
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AD9259 Datasheet(HTML) 24 Page - Analog Devices |
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24 / 53 page ![]() Data Sheet AD9259 Rev. E | Page 23 of 52 By asserting the PDWN pin high, the AD9259 is placed into power-down mode. In this state, the ADC typically dissipates 3 mW. During power-down, the LVDS output drivers are placed into a high impedance state. If any of the SPI features are changed before the power-down feature is enabled, the chip continues to function after PDWN is pulled low without requiring a reset. The AD9259 returns to normal operating mode when the PDWN pin is pulled low. This pin is both 1.8 V and 3.3 V tolerant. In power-down mode, low power dissipation is achieved by shutting down the reference, reference buffer, PLL, and biasing networks. The decoupling capacitors on REFT and REFB are discharged when entering power-down mode and must be recharged when returning to normal operation. As a result, the wake-up time is related to the time spent in the power-down mode: shorter cycles result in proportionally shorter wake-up times. With the recommended 0.1 μF and 2.2 μF decoupling capacitors on REFT and REFB, approximately 1 sec is required to fully discharge the reference buffer decoupling capacitors and approximately 375 μs is required to restore full operation. There are several other power-down options available when using the SPI. The user can individually power down each channel or put the entire device into standby mode. The latter option allows the user to keep the internal PLL powered when fast wake-up times (~600 ns) are required. See the Memory Map section for more details on using these features. Digital Outputs and Timing The AD9259 differential outputs conform to the ANSI-644 LVDS standard on default power-up. This can be changed to a low power, reduced signal option (similar to the IEEE 1596.3 standard) via the SDIO/ODM pin or SPI. The LVDS standard can further reduce the overall power dissipation of the device by approximately 17 mW. See the SDIO/ODM Pin section or Table 16 in the Memory Map section for more information. The LVDS driver current is derived on-chip and sets the output current at each output equal to a nominal 3.5 mA. A 100 Ω differential termination resistor placed at the LVDS receiver inputs results in a nominal 350 mV swing at the receiver. The AD9259 LVDS outputs facilitate interfacing with LVDS receivers in custom ASICs and FPGAs for superior switching performance in noisy environments. Single point-to-point net topologies are recommended with a 100 Ω termination resistor placed as close to the receiver as possible. If there is no far-end receiver termination or there is poor differential trace routing, timing errors may result. To avoid such timing errors, it is recommended that the trace length be less than 24 inches and that the differential output traces be close together and at equal lengths. An example of the FCO and data stream with proper trace length and position is shown in Figure 49. CH1 500mV/DIV = DCO CH2 500mV/DIV = DATA CH3 500mV/DIV = FCO 2.5ns/DIV Figure 49. LVDS Output Timing Example in ANSI-644 Mode (Default) An example of the LVDS output using the ANSI-644 standard (default) data eye and a time interval error (TIE) jitter histogram with trace lengths less than 24 inches on standard FR-4 material is shown in Figure 50. Figure 51 shows an example of trace lengths exceeding 24 inches on standard FR-4 material. Notice that the TIE jitter histogram reflects the decrease of the data eye opening as the edge deviates from the ideal position. It is the user’s respon- sibility to determine if the waveforms meet the timing budget of the design when the trace lengths exceed 24 inches. Additional SPI options allow the user to further increase the internal termination (increasing the current) of all four outputs to drive longer trace lengths (see Figure 52). Even though this produces sharper rise and fall times on the data edges and is less prone to bit errors, the power dissipation of the DRVDD supply increases when this option is used. In addition, notice in Figure 52 that the histogram is improved compared with that shown in Figure 51. See the Memory Map section for more details. |
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