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AM29BDD160G Datasheet(PDF) 68 Page - Advanced Micro Devices

Part # AM29BDD160G
Description  16 Megabit (1 M x 16-bit/512 K x 32-Bit), CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory
PDF  80 Pages
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Manufacturer  AMD [Advanced Micro Devices]
Direct Link  http://www.amd.com
Logo AMD - Advanced Micro Devices

AM29BDD160G Datasheet(HTML) 68 Page - Advanced Micro Devices

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Am29BDD160G
AC CHARACTERISTICS
Erase/Program Operations
Note:
1. Not 100% tested.
2. See the section for more information.
Parameter
Description
All Speed Options
Unit
JEDEC
Std.
tAVAV
tWC
Write Cycle Time (Note 1)
Min
60
ns
tAVWL
tAS
Address Setup Time
Min
0
ns
tWLAX
tAH
Address Hold Time
Min
25
ns
tDVWH
tDS
Data Setup to WE# Rising Edge
Min
15
ns
tWHDX
tDH
Data Hold from WE# Rising Edge
Min
2
ns
tOES
Output Enable Setup Time
Min
0
ns
tGHWL
tGHWL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
tELWL
tCS
CE# Setup Time
Min
0
ns
tWHEH
tCH
CE# Hold Time
Min
0
ns
CE# Setup to CLK
Min
7
tWLWH
tWP
WE# Width
Min
25
ns
tWHWL
tWPH
Write Pulse Width High
Min
30
ns
tWHWH1
tWHWH1
Programming Operation (Note 2)
Typ
9
µs
tWHWH2
tWHWH2
Sector Erase Operation (Note 2)
Typ
0.5
sec.
tVCS
VCC Setup Time (Note 1)
Min
50
µs
tRB
Recovery Time from RY/BY#
Min
0
ns
tBUSY
RY/BY# Delay After WE# Rising Edge
Max
90
ns
tWPWS
WP# Setup to WE# Rising Edge with
Command
Min
20
ns
tWPRH
WP# Hold after RY/BY# Rising Edge
Max
2
ns



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