AM29BDD160G datasheet(75/80 Pages) AMD

75 / 80 page

Am29BDD160G

ERASE AND PROGRAMMING PERFORMANCE

Notes:

1. Typical program and erase times assume the following conditions: 25°C, 2.5 V V

CC, 1M cycles. Additionally, programming

typically assume checkerboard pattern.

2. Under worst case conditions of 145°C, V

CC = 2.5 V, 100,000 cycles.

3. The typical chip programming time is considerably less than the maximum chip programming time listed.

4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.

5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See

Tables 19 and 20 for further information on command definitions.

6. The device has a minimum erase and program cycle endurance of 1M cycles.

7. PPBs have a minimum program/erase cycle endurance of 100 cycles.

LATCHUP CHARACTERISTICS

Note:Includes all pins except V

CC. Test conditions: VCC = 3.0 V, one pin at a time.

PQFP AND FORTIFIED BGA PIN CAPACITANCE

Note:

1. Sampled, not 100% tested.

2. Test conditions T

A = 25°C, f = 1.0 MHz.

DATA RETENTION

Parameter

Typ (Note 1)

Max (Note 2)

Unit

Comments

Sector Erase Time

1.0

Excludes 00h

programming prior to

erasure (Note 4)

Chip Erase Time

230

Double Word Program Time

250

µs

Excludes system level

overhead (Note 5)

Word (x16) Program Time

210

µs

Accelerated Double Word Program Time

130

µs

Accelerated Chip Program Time

Chip Program Time

(Note 3)

x16

100

x32

120

Description

Min

Max

Input voltage with respect to VSS on all pins except I/O pins

(including A9, ACC, and WP#)

–1.0 V

12.5 V

Input voltage with respect to VSS on all I/O pins

–1.0 V

VCC + 1.0 V

VCC Current

–100 mA

+100 mA

Parameter

Symbol

Parameter Description

Test Setup

Typ

Max

Unit

CIN

Input Capacitance

VIN = 0

7.5

COUT

Output Capacitance

VOUT = 0

8.5

CIN2

Control Pin Capacitance

VIN = 0

7.5

Parameter

Test Conditions

Min

Unit

Minimum Pattern Data Retention Time

150°C

Years

125°C

Years

AM29BDD160G Datasheet(PDF) 75 Page - Advanced Micro Devices

AM29BDD160G Datasheet(HTML) 75 Page - Advanced Micro Devices

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