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GD25Q257DFJR Datasheet(PDF) 86 Page - GigaDevice Semiconductor (Beijing) Inc. |
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GD25Q257DFJR Datasheet(HTML) 86 Page - GigaDevice Semiconductor (Beijing) Inc. |
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86 / 99 page  3.3V Uniform Sector Dual and Quad Serial Flash GD25Q257D 86 9.6. AC CHARACTERISTICS (T= -40℃~85℃, VCC=2.7~3.6V, CL=30pf) Symbol Parameter Min. Typ. Max. Unit fC0 Serial Clock Frequency for all instructions except Read 104 MHz fC1 Serial Clock Frequency for Dual I/O (BBH, BCH), Quad I/O (EBH, ECH), Dual Output (3BH, 3CH), Quad Output (6BH, 6CH), Fast Read (0BH, 0CH) instructions, on 3.0 - 3.6V power supply 104 MHz fC2 Serial Clock Frequency for DTR Quad I/O Fast Read (EEH, EDH) instructions, on 3.0 - 3.6V power supply 80 MHz fC3 Serial Clock Frequency for Dual I/O (BBH, BCH), Quad I/O (EBH, ECH), Dual Output (3BH, 3CH), Quad Output (6BH, 6CH), Fast Read (0BH, 0CH) instructions, on 2.7 – 3.0V power supply 80 MHz fC4 Serial Clock Frequency for DTR Quad I/O Fast Read (EEH, EDH) instructions, on 2.7 – 3.0V power supply 70 MHz fR Serial Clock Frequency For: Read (03H, 13H) 50 MHz tCLH1 Serial Clock High Time in STR Mode 3.7 ns tCLH2 Serial Clock High Time in DTR Mode 5.6 ns tCLL1 Serial Clock Low Time in STR Mode 3.7 ns tCLL2 Serial Clock Low Time in DTR Mode 5.6 ns tCLCH Serial Clock Rise Time (Slew Rate) 0.2 V/ns tCHCL Serial Clock Fall Time (Slew Rate) 0.2 V/ns tSLCH CS# Active Setup Time 8 ns tCHSH CS# Active Hold Time 5 ns tSHCH CS# Not Active Setup Time 5 ns tCHSL CS# Not Active Hold Time 5 ns tSHSL CS# High Time (Read/Write) 20 ns tSHQZ Output Disable Time 6 ns tCLQX Output Hold Time 1.8 ns tDVCH Data In Setup Time 2 ns tCHDX Data In Hold Time 2 ns tHLCH HOLD# Low Setup Time (Relative to Clock) 5 ns tHHCH HOLD# High Setup Time (Relative to Clock) 5 ns tCHHL HOLD# High Hold Time (Relative to Clock) 5 ns tCHHH HOLD# Low Hold Time (Relative to Clock) 5 ns tHLQZ HOLD# Low To High-Z Output 6 ns tHHQX HOLD# High To Low-Z Output 8 ns tCLQV Clock Low To Output Valid 7 ns tWHSL Write Protect Setup Time Before CS# Low 20 ns tSHWL Write Protect Hold Time After CS# High 100 ns tDP CS# High To Deep Power-Down Mode 20 μs tRES1 CS# High To Standby Mode Without Electronic Signature Read 30 μs |
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