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GD25Q257DFJR Datasheet(PDF) 87 Page - GigaDevice Semiconductor (Beijing) Inc. |
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GD25Q257DFJR Datasheet(HTML) 87 Page - GigaDevice Semiconductor (Beijing) Inc. |
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87 / 99 page  3.3V Uniform Sector Dual and Quad Serial Flash GD25Q257D 87 tRES2 CS# High To Standby Mode With Electronic Signature Read 30 μs tSUS CS# High To Next Command After Suspend 20 μs tRS Latency Between Resume And Next Suspend 100 μs tRST CS# High To Next Command After Reset (Except From Erase) 30 μs tRST_E CS# High To Next Command After Reset (From Erase) 12 ms tW Write Status Register Cycle Time 5 20 ms tBP1 Byte Program Time (First Byte) 30 50 μs tBP2 Additional Byte Program Time (After First Byte) 2.5 12 μs tPP Page Programming Time 0.4 2.4 ms tSE Sector Erase Time 70 400 ms tBE1 Block Erase Time (32K Bytes) 0.16 0.8 s tBE2 Block Erase Time (64K Bytes) 0.22 1 s tCE Chip Erase Time (GD25Q257D) 70 200 s Note: 1. Typical value tested at T = 25℃. 2. Value guaranteed by design and/or characterization, not 100% tested in production. |
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