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AXM0F243 Datasheet(PDF) 8 Page - ON Semiconductor

Part # AXM0F243
Description  SoC Ultra-Low Power RF-Microcontroller for RF Carrier Frequencies in the Range 27 - 1050 MHz
PDF  53 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

AXM0F243 Datasheet(HTML) 8 Page - ON Semiconductor

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AXM0F243
www.onsemi.com
8
SPECIFICATIONS
Table 4. ABSOLUTE MAXIMUM RATINGS (Note 1)
Symbol
Description
Condition
Min
Max
Units
VDDD
Supply voltage
−0.5
5.5
V
IDD
Supply current
200
mA
Ptot
Total power consumption
800
mW
Pi
Absolute maximum input power at receiver input
ANTP and ANTN
pins in RX mode
10
dBm
II1
DC current into pin SYSCLK
−10
10
mA
II2
DC current into GPIO
−25
25
mA
II3
DC current into pins ANTP, ANTN, ANTP1
−100
100
mA
Via
Input voltage ANTP, ANTN, ANTP1 pins
−0.5
5.5
V
Input voltage GPIO pins
−0.5
VDDD + 0.5
V
Ves
Electrostatic handling
HBM
−2000
2000
V
Lu
GPIO pin current for latch−up
−140
140
mA
Tamb
Operating temperature
−40
85
°C
Tstg
Storage temperature
−65
150
°C
Tj
Junction Temperature
150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
DC Characteristics
Table 5. SUPPLIES
Sym
Description
Condition
Min
Typ
Max
Units
TAMB
Operational ambient temperature
−40
27
85
°C
VDDD
I/O and voltage regulator supply voltage
1.8
3.0
3.6
V
IDDsleep1
Sleep mode
I2C wakeup, WDT and Comparators on
6 MHz. Max is at 85°C and 3.6 V
1.7
mA
IDDsleep2
Sleep mode
I2C wakeup, WDT and Comparators on
12 MHz. Max is at 85°C and 3.6 V
2.2
mA
IDDdeep-
sleep
Deep Sleep current
I2C wakeup and WDT on
Max is at 85°C and 3.6 V
2.5
mA
IDD6
CPU at 6 MHz, execute from flash
Max is at 85°C and 3.6 V
1.8
mA
IDD24
CPU at 24 MHz, execute from flash
Max is at 85°C and 3.6 V
3.0
mA
IDD48
CPU at 48 MHz, execute from flash
Max is at 85°C and 3.6 V
5.4
mA
IDDxres
Supply current while XRES asserted
2
mA
IRX
Current consumption RX
RF frequency generation subsystem:
Internal VCO and internal loop−fiter
868 MHz, datarate 6 kbps
9.5
mA
169 MHz, datarate 6 kbps
6.5
868 MHz, datarate 100 kbps
11
169 MHz, datarate 100 kbps
7.5
ITX−DIFF
Current consumption TX
differential
868 MHz, 15 dBm, CW, Note 2
RF frequency generation subsystem:
Internal VCO and internal loop−filter
Antenna configuration:
Differential PA, internal RX/TX switch
55
mA
2. Measured with optimized matching networks.



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