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LTC4282 Datasheet(PDF) 4 Page - Analog Devices |
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LTC4282 Datasheet(HTML) 4 Page - Analog Devices |
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4 / 32 page ![]() LTC4238 4 Rev. 0 For more information www.analog.com SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS VFETBAD(TH) VDD – SOURCE FET-Bad Threshold l 80 100 120 mV VSTRESS(TH) VDD – SOURCE Low Stress Threshold l 1.6 2 2.4 V ISOURCE SOURCE Input Current VSOURCE = 48V l 10 40 300 µA tDL(UV) Debounce Turn-On Propagation Delay UV Turn-On l 30 40 50 ms tDL(OV) Turn-On Propagation Delay OV Turn-On l 25 50 µs tDL(PG) Power Good Delay l 1 3 µs VCONFIG1/2 Input High Threshold l INTVCC – 0.8 INTVCC – 0.5 INTVCC – 0.2 V Input Low Threshold l 0.2 0.5 0.8 V ICONFIG CONFIG Sink or Source Current CONFIG = 0 to INTVCC l ±20 µA VISET(TH) ISET Threshold Error (Note 4) l ±150 mV IISET ISET Input Current V = 0, 5V l 0 ±1 µA Other Pin and Functions VOL PG, FLT# Output Low Voltage I = 2mA l 0.3 0.4 V IOH PG, FLT# Leakage Current V = 80V l 0 ±1 µA RVDSFB Resistance Between VDD and VDSFB Pins Gate On l 90 120 150 kΩ IVDSFB VDSFB Input Current Gate Off l 0 ±1 µA ICOMM COMM Source Current V = 2.5V, Gate On and in Current Limit l –3.5 –5 –6.5 µA COMM Sink Current V = 2.5V, Gate Off l 3 mA VCOMM(SERVO) COMM Servo Voltage LSSS Start-Up l 0.35 0.8 0.9 V Gate Fully On, Not in Current Limit l 2.3 2.5 2.7 V VCOMM(TH) COMM High Threshold In Current Limit l INTVCC – 2 INTVCC – 1.5 INTVCC – 0.85 V COMM Low Threshold Gates On, Not in LSSS l 0.9 1.4 1.9 V COMM LSSS Threshold Gate On, in LSSS l 0.1 0.2 0.3 V VTMR(H) TMR, TMRFET High Threshold Rising (Note 5) l 2.50 2.56 2.62 V VTMR(L) TMR, TMRFET Low Threshold Falling (Note 5) l 0.16 0.2 0.24 V ITMR(UP) TMR (ILIM), TMRFET Pull Up Current VTIMER = 0V l –16.5 –20 –22 µA TMR (SOA) Pull Up Current ΔVSNS = 0V and VDD – VVDSFB = 0V l ±1 µA ΔVSNS = 10mV and VDD – VVDSFB = 6V l –90 –100 –110 µA ΔVSNS = 20mV and VDD – VVDSFB = 50mV l –2.5 –1.4 1 µA ITMR(DN) TMR(ILIM) Pull Down Current VTMR = 2.56V l 3 5 7 µA ITMRFET(DN) TMRFET Pull Down Current VTMRFET = 2.56V l 0.2 0.5 0.8 mA DOC Overcurrent Auto-Retry Duty Cycle l 0.04 0.08 0.12 % DFETBAD FETBAD Auto-Retry Duty Cycle l 0.8 1.6 2.4 % Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. Note 2: All currents into pins are positive. All voltages are referenced to GND unless otherwise specified. ELECTRICAL CHARACTERISTICS The l denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. VDD = 48V unless otherwise noted. Note 3: Internal clamps limit the GATE pin to a minimum of 10V above or 0.3V below SOURCE. Driving this pin to voltages beyond the clamp may damage the device. Note 4: See Table 1 for more details. |
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