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LTC4282 Datasheet(PDF) 11 Page - Analog Devices |
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LTC4282 Datasheet(HTML) 11 Page - Analog Devices |
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11 / 32 page ![]() LTC4238 11 Rev. 0 For more information www.analog.com APPLICATIONS INFORMATION A typical LTC4238 application is a high availability system in which a positive voltage supply is distributed to power individual hot-swapped cards. In the following sections, the parallel mode is first cho- sen to demonstrate common functions and basic hot- swap applications. The unique features and applications of each operation mode are then described separately. A basic 48V, 40A LTC4238 application circuit is shown in Figure 1. The power supply on a board is controlled by using two pairs of N-channel pass transistors, M1A-B and M2A-B, placed in the power path. Resistors RS1 and RS2 sense current through M1A-B and M2A-B. Resistors R1, R2 and R3 define undervoltage and overvoltage lev- els. RG1-4 prevent high frequency self-oscillations in the MOSFETs. R7 and R8 set the power good threshold, and R6 scales current limit foldback to the intended operating voltage. The following sections cover turn-on, turn-off and various faults that the LTC4238 detects and acts upon. External component selection is discussed in detail in the Design Examples section. Turn-On Sequence Several conditions must be met before the external MOSFETs turn on. First the external supply, VDD, must exceed its 6.0V undervoltage lockout level. Next, the inter- nally generated supply, INTVCC, must cross its 4V under- voltage threshold. This generates a power-on-reset pulse. After a power-on-reset pulse, the UV and OV pins verify that input power is within the acceptable range. The state of the UV comparator must be stable for at least 40ms to qualify for turn-on. The MOSFETs are then turned on by charging up the GATE pins with 50μA current sources. When the GATE voltage reaches the MOSFET threshold voltage, the MOSFET begins to turn on and the SOURCE voltage then follows the GATE voltages as it increases. While the MOSFETs are turning on, the power dissipa- tion in current limit for each MOSFET is limited to the Figure 1. 48V, 40A Hot Swap Controller with SOA Timer in Parallel Mode 0.5m 0.5m M1A RG1 10 M2A PSMN3R7-100BSE RG2 10 R6 360k 1% R3 93.1k 1% R2 3.01k 1% R1 4.22k 1% C3 0.1µF CFET 62nF R7 62k 1% R8 5.23k 1% CL CE1 6.8nF CE2 56nF RE1 1.82k, 1% RTOP 73.2k 1% RBOTTOM 29.4k 1% CF 0.1µF M1B RG3 10 M2B PSMN3R7-100BSE RG4 10 UV FLT# PG TMR VDD CONFIG1 SENSE1– SENSE1+ GATE1 SENSE2– GATE2 SOURCE VDSFB FB COMM LTC4238 SENSE2+ OV ISET CONFIG2 INTVCC TMRFET GND 48V GND VOUT 48V BACKPLANE PLUG-IN BOARD 40A Z1 SMC5K60A ×3 RS1 RS2 CE3 680nF RE3 750k 1% 4238 F01 RE2 22.6k, 1% PSMN3R7-100BSE PSMN3R7-100BSE |
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