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LTC4282 Datasheet(PDF) 11 Page - Analog Devices

Part # LTC4282
Description  High Voltage High Current Hot Swap Controller
PDF  32 Pages
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Manufacturer  AD [Analog Devices]
Direct Link  http://www.analog.com
Logo AD - Analog Devices

LTC4282 Datasheet(HTML) 11 Page - Analog Devices

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LTC4238
11
Rev. 0
For more information www.analog.com
APPLICATIONS INFORMATION
A typical LTC4238 application is a high availability system
in which a positive voltage supply is distributed to power
individual hot-swapped cards.
In the following sections, the parallel mode is first cho-
sen to demonstrate common functions and basic hot-
swap applications. The unique features and applications
of each operation mode are then described separately. A
basic 48V, 40A LTC4238 application circuit is shown in
Figure 1. The power supply on a board is controlled by
using two pairs of N-channel pass transistors, M1A-B
and M2A-B, placed in the power path. Resistors RS1 and
RS2 sense current through M1A-B and M2A-B. Resistors
R1, R2 and R3 define undervoltage and overvoltage lev-
els. RG1-4 prevent high frequency self-oscillations in the
MOSFETs. R7 and R8 set the power good threshold, and
R6 scales current limit foldback to the intended operating
voltage.
The following sections cover turn-on, turn-off and various
faults that the LTC4238 detects and acts upon. External
component selection is discussed in detail in the Design
Examples section.
Turn-On Sequence
Several conditions must be met before the external
MOSFETs turn on. First the external supply, VDD, must
exceed its 6.0V undervoltage lockout level. Next, the inter-
nally generated supply, INTVCC, must cross its 4V under-
voltage threshold. This generates a power-on-reset pulse.
After a power-on-reset pulse, the UV and OV pins verify
that input power is within the acceptable range. The state
of the UV comparator must be stable for at least 40ms to
qualify for turn-on. The MOSFETs are then turned on by
charging up the GATE pins with 50μA current sources.
When the GATE voltage reaches the MOSFET threshold
voltage, the MOSFET begins to turn on and the SOURCE
voltage then follows the GATE voltages as it increases.
While the MOSFETs are turning on, the power dissipa-
tion in current limit for each MOSFET is limited to the
Figure 1. 48V, 40A Hot Swap Controller with SOA Timer in Parallel Mode
0.5m
0.5m
M1A
RG1
10
M2A
PSMN3R7-100BSE
RG2
10
R6
360k
1%
R3
93.1k
1%
R2
3.01k
1%
R1
4.22k
1%
C3
0.1µF
CFET
62nF
R7
62k
1%
R8
5.23k
1%
CL
CE1
6.8nF
CE2
56nF
RE1
1.82k, 1%
RTOP
73.2k
1%
RBOTTOM
29.4k
1%
CF
0.1µF
M1B
RG3
10
M2B
PSMN3R7-100BSE
RG4
10
UV
FLT#
PG
TMR
VDD
CONFIG1
SENSE1–
SENSE1+
GATE1
SENSE2–
GATE2 SOURCE VDSFB
FB
COMM
LTC4238
SENSE2+
OV
ISET
CONFIG2
INTVCC
TMRFET
GND
48V
GND
VOUT
48V
BACKPLANE PLUG-IN
BOARD
40A
Z1
SMC5K60A
×3
RS1
RS2
CE3
680nF
RE3
750k
1%
4238 F01
RE2
22.6k, 1%
PSMN3R7-100BSE
PSMN3R7-100BSE



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