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LTC4282 Datasheet(PDF) 28 Page - Analog Devices |
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LTC4282 Datasheet(HTML) 28 Page - Analog Devices |
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28 / 32 page ![]() LTC4238 28 Rev. 0 For more information www.analog.com so that the total current limit is calculated by Equation 21. ILIM =ILIM1+ILIM2 = 12mV 200µΩ +3A = 63A (21) Taking all tolerances into account, this provides sufficient margin for the maximum load current of 58A. Step 3. Design the TMR behavior. Since there is no con- cern about a large input step, a short timer delay is chosen for overcurrent turn-off. In the low stress staged start mode the TMR function is a filtered circuit breaker and a single timer capacitor on TMR works for this purpose. Channel 1 dictates the timer capacitor selection since it carries most of the load current. All of the channel 1 cur- rent could be concentrated into a single MOSFET. The current limit of channel 1 is 60A in this example, and the MOSFET (IPT015N10N5) can handle 50V and 60A for 80μs. It has been found that 20μs of circuit breaker filtering is sufficient to reject noise encountered in most systems, so the chosen MOSFET is up to the task. The TMR pull-up current is 20μA, with a voltage threshold of 2.56V. Compute the timer capacitance for 20μs filter delay using Equation 22. CTMR = ITMR(UP),MAX • tFILTER VTMR(TH) = 20µA • 20µs 2.56V = 156pF (22) Select the next-larger available capacitance: CTMR = 180pF. Step 4. Design the start-up channel (channel 2) and FET- bad timer. At start-up in low stress staged start mode, channel 2 charges the load capacitance with a small trickle current. The necessary start-up time for a 2500μF load capacitor is: tCHAREGUP = 1 2 CL • V 2 PDISS,START-UP = 1 2 • 2500µF •(53V)2 3A • 30% • 53V = 74ms (23) APPLICATIONS INFORMATION The FET bad timer must be set longer than the startup time for the load capacitor to be fully charged. Meanwhile, FET-bad timer should be short enough that the FET picked for channel 2 can handle the start-up current with the full drain to source voltage for this duration. With a 2× safety margin, we choose: CFET = 2 • tSTART-UP •ITMRFET(UP) 2.56V = 2 • 74ms • 20µA 2.56V = 1.2µF (24) The next larger available capacitance, 1.5µF, is used. Since the start-up current is relatively low, a small, low cost device may be used. PSMN7R6-100B, which can stand the 30% foldback of 3A at 48V as a DC condition is selected for this trickle channel. Its RDS(ON) is no higher than 7.6mΩ. After startup, the worst-case power dissipa- tion in this channel is (3A)2 • 7.6mΩ = 68mW, well within the MOSFET capability. Step 5. Run simulations to verify temperature rises in both the channel 1 and channel 2 MOSFETs under all oper- ating and fault conditions. This is a necessary step when using a single capacitor current limit timer as selected in Step 3. First, check the temperature rise in the channel 2 MOSFET (M2) during startup. The conditions include normal startup into current limit to fully charge the 2500μF load capacitor at the maximum input voltage. If the temperature rise is too high in normal startup condition, a larger MOSFET can be selected for channel 2. For the fault condition, the worst-case power dissipated in MOSFET is same as the max voltage (53V) across the MOSFET with 30% of full current limit since the constant power profile is selected for foldback. If the temperature rise is too high, the startup current limit may be reduced by selecting a larger sense resistor RS2. Using the conditions of this example, it is found the worst-case temperature rise in M2 either in normal startup condition or with fault resistors is lower than 50°C. This verifies the selected channel 2 MOSFET, PSMN7R6-100B, has more than enough SOA to handle the worst-case dissipation. |
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