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LTC4282 Datasheet(PDF) 28 Page - Analog Devices

Part # LTC4282
Description  High Voltage High Current Hot Swap Controller
PDF  32 Pages
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Manufacturer  AD [Analog Devices]
Direct Link  http://www.analog.com
Logo AD - Analog Devices

LTC4282 Datasheet(HTML) 28 Page - Analog Devices

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LTC4238
28
Rev. 0
For more information www.analog.com
so that the total current limit is calculated by Equation 21.
ILIM =ILIM1+ILIM2 =
12mV
200µΩ
+3A = 63A
(21)
Taking all tolerances into account, this provides sufficient
margin for the maximum load current of 58A.
Step 3. Design the TMR behavior. Since there is no con-
cern about a large input step, a short timer delay is chosen
for overcurrent turn-off. In the low stress staged start
mode the TMR function is a filtered circuit breaker and
a single timer capacitor on TMR works for this purpose.
Channel 1 dictates the timer capacitor selection since it
carries most of the load current. All of the channel 1 cur-
rent could be concentrated into a single MOSFET. The
current limit of channel 1 is 60A in this example, and
the MOSFET (IPT015N10N5) can handle 50V and 60A
for 80μs. It has been found that 20μs of circuit breaker
filtering is sufficient to reject noise encountered in most
systems, so the chosen MOSFET is up to the task. The
TMR pull-up current is 20μA, with a voltage threshold of
2.56V. Compute the timer capacitance for 20μs filter delay
using Equation 22.
CTMR =
ITMR(UP),MAX • tFILTER
VTMR(TH)
=
20µA • 20µs
2.56V
= 156pF
(22)
Select the next-larger available capacitance: CTMR  =
180pF.
Step 4. Design the start-up channel (channel 2) and FET-
bad timer. At start-up in low stress staged start mode,
channel 2 charges the load capacitance with a small trickle
current. The necessary start-up time for a 2500μF load
capacitor is:
tCHAREGUP =
1
2
CL • V
2
PDISS,START-UP
=
1
2
• 2500µF •(53V)2
3A • 30% • 53V
= 74ms
(23)
APPLICATIONS INFORMATION
The FET bad timer must be set longer than the startup
time for the load capacitor to be fully charged. Meanwhile,
FET-bad timer should be short enough that the FET picked
for channel 2 can handle the start-up current with the full
drain to source voltage for this duration. With a 2× safety
margin, we choose:
CFET =
2 • tSTART-UP •ITMRFET(UP)
2.56V
=
2 • 74ms • 20µA
2.56V
= 1.2µF
(24)
The next larger available capacitance, 1.5µF, is used.
Since the start-up current is relatively low, a small, low
cost device may be used. PSMN7R6-100B, which can
stand the 30% foldback of 3A at 48V as a DC condition is
selected for this trickle channel. Its RDS(ON) is no higher
than 7.6mΩ. After startup, the worst-case power dissipa-
tion in this channel is (3A)2 • 7.6mΩ = 68mW, well within
the MOSFET capability.
Step 5. Run simulations to verify temperature rises in
both the channel 1 and channel 2 MOSFETs under all oper-
ating and fault conditions. This is a necessary step when
using a single capacitor current limit timer as selected
in Step 3.
First, check the temperature rise in the channel 2 MOSFET
(M2) during startup. The conditions include normal startup
into current limit to fully charge the 2500μF load capacitor
at the maximum input voltage. If the temperature rise is
too high in normal startup condition, a larger MOSFET
can be selected for channel 2. For the fault condition, the
worst-case power dissipated in MOSFET is same as the
max voltage (53V) across the MOSFET with 30% of full
current limit since the constant power profile is selected
for foldback. If the temperature rise is too high, the startup
current limit may be reduced by selecting a larger sense
resistor RS2. Using the conditions of this example, it is
found the worst-case temperature rise in M2 either in
normal startup condition or with fault resistors is lower
than 50°C. This verifies the selected channel 2 MOSFET,
PSMN7R6-100B, has more than enough SOA to handle
the worst-case dissipation.



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