MCT8316Z datasheet(17/100 Pages) TI

17 / 100 page

8 Detailed Description

8.1 Overview

The MCT8316Z-Q1 device is an integrated 95-mΩ (combined high-side and low-side MOSFET's on-state

resistance) driver for 3-phase motor-drive applications. The device reduces system component count, cost, and

complexity by integrating three half-bridge MOSFETs, gate drivers, charge pump, linear regulator for the external

load and buck regulator. A standard serial peripheral interface (SPI) provides a simple method for configuring

the various device settings and reading fault diagnostic information through an external controller. Alternatively,

a hardware interface (H/W) option allows for configuring the most commonly used settings through fixed external

resistors.

The architecture uses an internal state machine to protect against short-circuit events, and protect against dv/dt

parasitic turnon of the internal power MOSFET.

The MCT8316Z-Q1 device integrates three-phase sensored trapezoidal commutation using analog or digital hall

sensors for position detection.

In addition to the high level of device integration, the MCT8316Z-Q1 device provides a wide range of

integrated protection features. These features include power-supply undervoltage lockout (UVLO), charge-pump

undervoltage lockout (CPUV), overcurrent protection (OCP), AVDD undervoltage lockout (AVDD_UV), buck

regulator ULVO for MCT8316ZR/T-Q1 and overtemperature shutdown (OTW and OTSD). Fault events are

indicated by the nFAULT pin with detailed information available in the SPI registers on the SPI device version.

The MCT8316ZT-Q1 and MCT8316ZR-Q1 device are available in 0.5-mm pin pitch, VQFN surface-mount

packages. The VQFN package size is 7 mm × 5 mm.

www.ti.com

MCT8316Z-Q1

SLVSGO3 – DECEMBER 2021

Submit Document Feedback

Product Folder Links: MCT8316Z-Q1

MCT8316Z Datasheet(PDF) 17 Page - Texas Instruments