NXP Semiconductors

10

MR2001V

4

General product characteristics

4.1

Maximum ratings

4.2

General operating conditions

Table 4. Maximum ratings

All voltages are with respect to ground, unless otherwise specified. Exceeding these ratings may cause a malfunction or permanent

damage to the device.

Symbol

Ratings

Min.

Max.

Unit

Notes

Supply Voltage (static)

-0.30

3.63

V

Supply Voltage (dynamic)

• allowed < 10% of product total llifetime.

-0.30

4.00

V

VCO Core Supply

-0.30

4.95

V

Digital Supply Voltage (static, dynamic)

-0.30

3.63

V

Tuning Voltage

-0.30

4.80

V

Voltage Applied to All Used I/O Pins

-0.30

3.63

V

ESD

ESD_HBM

ESD for Human Body Model (HBM) Digital I/O, Analog, RF

-2000

2000

V

ESD_MM

ESD for Machine Model (MM)

-200

200

V

R1

HBM Circuit Description I

–

±1500

W

C

HBM Circuit Description II

–

±100

pF

ESD for human body model (HBM) digital I/O

-1000

1000

V

ESD HBM, RF I/O

-100

100

V

Table 5. General operation conditions

Symbol

Parameter

Min.

Typ.

Max.

Unit

Notes

dpack

Package Thickness (mounted condition)

–

950

1200

μm

Temp

Ambient Package Temperature

-40

27

125

°C

LU

Latch Up (LU) for DC and Bias Pads

• Pulsed current injection method

-100

–

+100

mA

Pitch

BGA Pitch

–

500

–

μm

dchip

Chip Thickness

113

—

143

μm

St_temp

Storage Temperature

-55

—

150

Pad withstanding

—

—

150

mA

Number of pulses per pad

Number of positive pulses (HBM)

—

—

1

Number of negative Pulses (HBM)

—

—

1

Interval of Pulses

—

—

1

s