7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)

MIN

MAX

UNIT

VS

Total supply voltage (VS+– VS–)

13

V

dVS/dT for supply turn-on and turn-off((2))

1

V/µs

VI

Input voltage

VS–

VS+

V

VID

Differential input voltage

VS–

VS+

V

II

Continuous input current(3)

±10

mA

IO

Continuous output current(4)

±30

mA

Continuous power dissipation

See Thermal Information

TJ

Junction temperature

150

°C

Tstg

Storage temperature

–65

150

°C

(1)

Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute Maximum Ratings do not imply

functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions.

If used outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be fully

functional, and this may affect device reliability, functionality, performance, and shorten the device lifetime.

(2)

Staying below this specification makes sure that the edge-triggered ESD absorption devices across the supply pins remain off.

(3)

Continuous input current limit for the ESD diodes to supply pins.

(4)

Long-term continuous current for electromigration limits.

7.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic

discharge

Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±2000

V

Charged-device model (CDM), per ANSI/ESDA/JEDEC JS-002(2)

±1500

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

VS+ – VS–

Total supply voltage

6

10

12.6

V

TA

Ambient temperature

–40

25

85

°C

7.4 Thermal Information

THERMAL METRIC((1))

OPA814

UNIT

D (SOIC)

8 PINS

RθJA

Junction-to-ambient thermal resistance

122.9

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

63.1

°C/W

RθJB

Junction-to-board thermal resistance

66.3

°C/W

ΨJT

Junction-to-top characterization parameter

16.1

°C/W

YJB

Junction-to-board characterization parameter

65.5

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

N/A

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

OPA814

SBOSA14 – APRIL 2023

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