8.3 Feature Description

8.3.1 Input and ESD Protection

The OPA814 is built using a very high-speed complementary bipolar process. The internal junction breakdown

voltages are relatively low for these very small geometry devices. These breakdowns are reflected in the

Absolute Maximum Ratings. As Figure 8-3 shows, all device pins are protected with internal ESD protection

diodes to the power supplies.

The diodes provide moderate protection to input overdrive voltages beyond the supplies as well. The protection

diodes can typically support a 10-mA continuous current. Where higher currents are possible (for example, in

systems with ±12-V power supplies driving into the OPA814), add current limiting series resistors in series with

the two inputs to limit the current. Keep these resistor values as low as possible because high values degrade

both noise performance and frequency response. There are no back-to-back ESD diodes between VIN+ and

VIN–. As a result, the differential input voltage between VIN+ and VIN– is entirely absorbed by the VGS of the input

JFET differential pair and must not exceed the voltage ratings shown in the Absolute Maximum Ratings.

VS+

VS

VIN+

VOUT

Power Supply

ESD Cell

VIN

Internal

Circuitry

Figure 8-3. Internal ESD Protection

OPA814

SBOSA14 – APRIL 2023

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