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TDA4VM21 Datasheet(PDF) 166 Page - Texas Instruments |
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TDA4VM21 Datasheet(HTML) 166 Page - Texas Instruments |
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166 / 331 page  Table 6-8. MLB LVCMOS Electrical Characteristics (continued) Only GPIO mode supported. Over operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VILSS Input Low Voltage Steady State 0.3 × VDD(1) V VIH Input High Voltage 0.7 × VDD(1) V VIHSS Input High Voltage Steady State 0.75 × VDD(1) V VHYS Input Hysteresis Voltage 80 mV IIN Input Leakage Current VI = 1.8 V or 0 V ±10 µA RPD Pull-down Resistor 20 53 130 kΩ VOL Output Low Voltage 0.2 V VOH Output High Voltage VDD(1) - 0.2 V IOL Low Level Output Current VOL(MAX) 6 mA IOH High Level Output Current VOH(MIN) 6 mA SRI Input Slew Rate(2) fop > 100 MHz 1 V/ns fop < 1 MHz 10 V/ns (1) VDD stands for corresponding power supply. For more information on the power supply name and the corresponding ball, see Section 5.2, Pin Attributes, POWER column. (2) Slew rate may be further limited, reference Section 6.9 for actual slew rate during operation. Table 6-9. LVCMOS Electrical Characteristics over recommended operating conditions (unless otherwise noted) PARAMETER(1) TEST CONDITIONS MIN TYP MAX UNIT BALL NAMES: ALL other IOs BALL NUMBERS: ALL other IOs 1.8-V MODE VIL Input Low Voltage 0.35 × VDD(1) V VILSS Input Low Voltage Steady State 0.3 × VDD(1) V VIH Input High Voltage 0.65 × VDD(1) V VIHSS Input High Voltage Steady State 0.85 × VDD(1) V VHYS Input Hysteresis Voltage 150 mV IIN Input Leakage Current. VI = 1.8 V or 0 V ±10 µA RPU Pull-up Resistor 15 22 30 kΩ RPD Pull-down Resistor 15 22 30 kΩ VOL Output Low Voltage 0.45 V VOH Output High Voltage VDD(1) - 0.45 V IOL (2) Low Level Output Current VOL(MAX) 3 mA IOH (2) High Level Output Current VOH(MIN) 3 mA SRI (4) Input Slew Rate 18f(3) or 1.8E+6 V/s 3.3-V MODE VIL Input Low Voltage 0.8 V VILSS Input Low Voltage Steady State 0.6 V VIH Input High Voltage 2.0 V VIHSS Input High Voltage Steady State 2.0 V VHYS Input Hysteresis Voltage 150 mV IIN Input Leakage Current. VI = 3.3 V or 0 V ±10 µA RPD Pull-down Resistor 15 22 30 kΩ TDA4VM-Q1, TDA4VM SPRSP36K – SEPTEMBER 2021 – REVISED APRIL 2024 www.ti.com 166 Submit Document Feedback Copyright © 2024 Texas Instruments Incorporated Product Folder Links: TDA4VM-Q1 TDA4VM |
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