5 Specifications

5.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)

MIN

MAX

UNIT

Supply voltage range

VCC

–0.3

4

V

Voltage range at any input or output pin

Differential voltage between positive and negative

inputs

–2.5

2.5

V

Voltage at differential inputs

–0.5

4

V

CMOS Inputs

–0.5

4

V

Maximum junction temperature, TJ

–40

125

°C

Storage temperature, Tstg

–65

150

°C

(1)

Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute Maximum Ratings do not imply

functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions.

If used outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be fully

functional, and this may affect device reliability, functionality, performance, and shorten the device lifetime.

5.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic discharge

Human-body model (HBM), per AEC Q100-002(1), all pins

±2000

V

Charged-device model (CDM), per AEQ Q100-011, all pins

±1500

(1)

AEC Q100-002 indicates that HBM stressing must be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

5.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

VCC

Main power supply

3.0

3.3

3.6

V

Main supply ramp requirement

0.1

50

ms

V(I2C)

Supply that external resistors are pulled up to on SDA and SCL

1.7

3.6

V

V(PSN)

Supply noise on VCC pins (less than 4MHz)

100

mV

TA

Operating free-air temperature

–40

105

°C

TPCB

PCB temperature (1mm away from the device)

–40

112

°C

5.4 Thermal Information

THERMAL METRIC(1)

Device

UNIT

RGF (VQFN)

40 PINS

RθJA

Junction-to-ambient thermal resistance

29.4

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

18.9

°C/W

RθJB

Junction-to-board thermal resistance

11.0

°C/W

ψJT

Junction-to-top characterization parameter

0.3

°C/W

ψJB

Junction-to-board characterization parameter

10.9

°C/W

RθJC(bot)

Junction-to-case (bottom) thermal resistance

3.6

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

note.

5.5 Power Supply Characteristics

over operating free-air temperature range (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

PCC(ACTIVE--4DP)

Average active power

4 Lane DP Only

Four active DP lanes operating at 8.1Gbps;

PRBS7 pattern;

DPEN = H; LINR_L3;

500

mW

PCC(HPDLOW--4DP)

Power 4 Lane DP Only when HPDIN

= L

DPEN = H; HPDIN = L;

0.475

mW

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TDP142-Q1

SLLSG10 – NOVEMBER 2024

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