SID1182K datasheet(5/24 Pages) POWERINT

5 / 24 page

Rev. H 09/19

SID11x2K

Figure 10. Short-Circuit Protection Using Rectifier Diode D

VCE.

Figure 11. Short-Circuit Protection Using Resistors Chain R

VCEX.

PI-7671-093016

VCE (IGBT) Signal

VCE Pin Signal

VDES

VCE SAT

tRES

Fault

COM

Advanced Soft Shut Down (ASSD)

This function is activated after a short-circuit is detected. It protects

the power semiconductor switch against destruction by ending the

turn-on state and limiting the current slope in order to keep momen-

tary V

CE overvoltages below VCES. This function is particularly suited to

IGBT applications. Figure 12 shows how the ASSD function operates.

The V

CE desaturation is visible during time period P1 (yellow line).

During this time, the gate-emitter voltage (green line) is kept very

stable. Collector current (pink line) is also well stabilized and limited

Figure 12. Advanced Soft Shut Down Function.

to a safe value. At the end of period P1, V

GE is reduced during tFSSD1.

Due to collector current decrease a small V

CE overvoltage is seen.

During t

FSSD1 VGE is further reduced and the gate of the power

semiconductor switch is further discharged. During t

FSSD2 additional

small V

CE overvoltage events may occur. Once VGE drops below the

gate threshold of the IGBT, the collector current has decayed almost to

zero and the remaining gate charge is removed ‒ ending the short-

circuit event. The whole short-circuit current detection and safe

switch-off is lower than 10 µs (8 µs in this example).

ICE

VGE

VCE

IGE

tFSSD1

tFSSD2

PI-7951-080416

VCE

VGXX

VISO

RRES

RVCE

DSTO

CGXX

RGOFF

DVCE

Emitter

Collector

RGON

CRES

VEE

COM

SCALE-iDriver

Gate RGINT

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