ISL12022

FN6659 Rev.3.01

Page 5 of 32

Oct 24, 2019

Absolute Maximum Ratings

Thermal Information

Voltage on VDD, VBAT and IRQ/FOUT pins

(respect to ground) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 6.0V

Voltage on SCL and SDA pins

(respect to ground) . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to VDD +0.3V

Voltage on X1 and X2 pins

(respect to ground) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 2.5V

ESD Rating

Human Body Model (Per MIL-STD-883 Method 3014) . . . . . . . . . . >3kV

Machine Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >300V

Thermal Resistance (Typical)

JA (°C/W) JC (°C/W)

8 Ld SOIC (Notes 4, 5) . . . . . . . . . . . . . . . . .

102

46

Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C

Pb-free Reflow Profile . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . see TB493

CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product

reliability and result in failures not covered by warranty.

NOTE:

4.

JA is measured with the component mounted on a high effective thermal conductivity test board in free air. See TB379 for details.

5. For

JC, the “case temp” location is taken at the package top center.

DC Operating Characteristics - RTC Test Conditions: VDD = +2.7 to +5.5V, TA = -40°C to +85°C, unless otherwise stated.

Boldface limits apply over the operating temperature range, -40°C to +85°C

SYMBOL

PARAMETER

CONDITIONS

MIN

(Note 13)

TYP

(Note 9)

MAX

(Note 13)UNIT

NOTES

VDD

Main Power Supply

(Note 15)

2.7

5.5

V

VBAT

Battery Supply Voltage

(Note 15)

1.8

5.5

V

6

IDD1

Supply Current. (I2C not Active, Temperature

Conversion not Active, FOUT not Active)

VDD = 5V

4.1

15

µA

7, 8

VDD = 3V

3.5

14

µA

7, 8

IDD2

Supply Current. (I2C Active, Temperature

Conversion not Active, FOUT not Active)

VDD = 5V

200

500

µA

7, 8

IDD3

Supply Current. (I2C not Active, Temperature

Conversion Active, FOUT not Active)

VDD = 5V

120

400

µA

7, 8

IBAT

Battery Supply Current

VDD = 0V, VBAT = 3V, TA = +25°C

1.0

1.6

µA

7

VDD = 0V, VBAT = 3V

1.0

5.0

µA

7

IBATLKG Battery Input Leakage

VDD = 5.5V, VBAT = 1.8V

100

nA

ILI

Input Leakage Current on SCL

VIL = 0V, VIH = 5.5V

-1.0

±0.1

1.0

µA

ILO

I/O Leakage Current on SDA

VIL = 0V, VIH = 5.5V

-1.0

±0.1

1.0

µA

VBATM

Battery Level Monitor Threshold

-100

+100

mV

VPBM

Brownout Level Monitor Threshold

-100

+100

mV

VTRIP

VBAT Mode Threshold

(Note 15)

2.0

2.2

2.4

V

VTRIPHYS VTRIP Hysteresis

30

mV

11

VBATHYS VBAT Hysteresis

50

mV

11

FoutT

Oscillator Stability vs Temperature

VDD  3.3V

-5

+5

ppm

14

FoutV

Oscillator Stability vs Voltage

2.7V

 VDD  5.5V

-3

+3

ppm

14

ATLSB AT Sensitivity per LSB

BETA (4:0) = 10000

0.5

1

2

ppm

14

Temp

Temperature Sensor Accuracy

VDD = VBAT = 3.3V

±2

°C

11

IRQ/FOUT (OPEN DRAIN OUTPUT)

VOL

Output Low Voltage

VDD = 5.5V, IOL = 3mA

0.4

V

VDD = 2.7V, IOL = 1mA

0.4

V