ATSAM3703 datasheet(23/36 Pages) ATMEL

23 / 36 page

6237A–DRMSD–29-May-06

ATSAM3703

Command Sequencing

The ATSAM3703 supports DDR200 and faster DDR devices, and thus the DDR device must

support parameters defined in Table 9-5.

ATSAM3703 to DDR

DDR to ATSAM3703

The data from DDR to ATSAM3703 must meet timing requirements defined in Table 9-7. These

parameters are applicable at input of ATSAM3703, and must include effects of DDR device and

effects of board layout.

Table 9-5.

Supported Parameters

Symbol

Parameter

Value

MRD

MODE REGISTER SET command cycle time

min 20 ns

RAS

ACTIVE to PRECHARGE command

min 50 ns

max 70 us

ACTIVE to ACTIVE/AUTO REFRESH command period

min 70 ns

RFC

AUTO REFRESH to ACTIVE/AUTO REFRESH command

period

min 120 ns

RCD

ACTIVE to READ or WRITE delay

min 20 ns

tRP

PRECHARGE command period

min 20 ns

tRRD

ACTIVE bank a to ACTIVE bank b command

min 20 ns

WRITE recovery time

min 20 ns

tWTR

Internal WRITE to READ command delay

min 10 ns

tXSNR

Exit self refresh to non-READ command

min 80 ns

XSRD

Exit self refresh to READ command

min 2 us

tREFI

Average periodic REFRESH interval

7.8 us

Table 9-6.

Parameters

Symbol

Parameter

Value

Address and control hold time

min 3.6 ns

tIS

Address and control setup time

min 3.2 ns

DSS

DQS falling edge to CK setup time

min 4.3 ns

DSH

DQS falling edge hold time from CK

min 4.3 ns

tDS

DQ and DM setup time

min 1.7 ns

DQ and DM hold time

min 0.8 ns

ATSAM3703 Datasheet(PDF) 23 Page - ATMEL Corporation

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