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6402 Datasheet(PDF) 247 Page - Intel Corporation |
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6402 Datasheet(HTML) 247 Page - Intel Corporation |
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247 / 250 page ![]() Intel® 6400/6402 Advanced Memory Buffer Datasheet 247 Glossary A Glossary A.1 Terms and Definitions Term Definition ADC Analog to Digital Converter AMB Advanced Memory Buffer APM Autonomous Platform Manager ATE Automatic Test Equipment BIST Built-In Self-Test BL4/BL8 DRAM Burst Length 4/8 CAS Column Address Strobe CBC Chip Boot Configuration Chip disable An ECC encoding specifically tailored for memory such that the data from any defective memory device can be reconstructed from some aggregate of surviving memory devices. Corrects data from failed device. The AMB employs an “x8” ECC, which means that all data from a partially or completely failed 8-bit device can be recovered without stopping the system. This same ECC provides the same level of coverage for 4-bit (“x4”) devices. CRC Cyclic Redundancy Code(s). Usually in reference to binary error detection algorithms. CSR Configuration and Status Register(s) DDR Double Data Rate (SDRAM) DDR Branch The minimum aggregation of DDR channels which operate in lock-step to support error correction. Two channels per branch supports x8 chip disable ECC. A rank spans a branch. DDR Channel A DDR channel consists of a data channel with 72 bits of data and an ADDR/ CNTRL channel DDR Data channel A DDR data channel consists of 72 bits of data, divided into 18 data groups DDR Data group Each data group consists of 4 data signals and a differential strobe pair DFx Design for Test/Manufacturability/Validation DFV Design For Validation DIMM Dual In-Line Memory Module. A packaging arrangement of memory devices on a socketable substrate. DIMM Slot Receptacle (socket) for a DIMM. Also, the relative physical location of a specific DIMM on a DDR channel. DIMM Stack Dual-ranked x4 DRAM DIMM physical topology: refers to two physical rows of DRAM “stacked” one above another DLL Delay locked loop DPM Defects per million DRAM Dynamic Random Access Memory DRAM Page (Row) The DRAM cells selected by the Row Address ECC Error Correction Code. For the AMB, this is a chip disable code. EEPROM Electrically Erasable Programmable Read Only Memory EMask, EMASK Error Mask |
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