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IR3513Z Datasheet(PDF) 8 Page - International Rectifier

Part # IR3513Z
Description  XPHASE3TM POL CONTROL IC
PDF  36 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IR3513Z Datasheet(HTML) 8 Page - International Rectifier

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IR3513Z
Page 8
May 11, 2009
PARAMETER
TEST CONDITION
MIN
TYP
MAX
UNIT
Open Sense Line Detection
Sense Line Detection Active
Comparator Threshold Voltage
150
200
250
mV
Sense Line Detection Active
Comparator Offset Voltage
V(VOUT) < [V(VOSEN+) – V(LGND)] / 2
40
60
90
mV
VOSEN+ Open Sense Line
Comparator Threshold
Compare to V(VCCL)
87.5
90
92.5
%
VOSEN- Open Sense Line
Comparator Threshold
0.36
0.40
0.44
V
Sense Lines Detection Source
Currents
V(VOUT) = 100mv
250
500
750
uA
VCCL Regulator Amplifier
Reference Feedback Voltage
1.15
1.19
1.23
V
VCCLFB Bias Current
-1
0
1
uA
VCCLDRV Sink Current
10
30
mA
UVLO Start Threshold
Compare to V(VCCL)
90
94
98
%
UVLO Stop Threshold
Compare to V(VCCL)
82
86
90
%
Hysteresis
Compare to V(VCCL)
7.0
8.5
9.5
%
Gate Drivers
GATEH Source Resistance
BOOST – SW = 7V. Note 1
1.0
2.5
Ω
GATEH Sink Resistance
BOOST – SW = 7V. Note 1
1.0
2.5
Ω
GATEL Source Resistance
VCCP – PGND = 7V. Note 1
1.0
2.5
Ω
GATEL Sink Resistance
VCCP – PGND = 7V. Note 1
0.4
1.0
Ω
GATEH Source Current
BOOST=7V,GATEH=2.5V,SW=0V. Note
1
2.0
A
GATEH Sink Current
BOOST=7V,GATEH=2.5V,SW=0V. Note
1
2.0
A
GATEL Source Current
VCCP=7V, GATEL=2.5V, PGND=0V
Note 1
2.0
A
GATEL Sink Current
VCCP=7V, GATEL=2.5V, PGND=0V
Note 1
4.0
A
GATEH Rise Time
BOOST – SW = 7V, measure 1V to 4V
transition time
5
10
ns
GATEH Fall Time
BOOST - SW = 7V, measure 4V to 1V
transition time
5
10
ns
GATEL Rise Time
VCCP – PGND = 7V, Measure 1V to 4V
transition time
10
20
ns
GATEL Fall Time
VCCP – PGND = 7V, Measure 4V to 1V
transition time
5
10
ns
GATEL low to GATEH high
delay
BOOST = VCCP = 7V, SW = PGND =
0V, measure time from GATEL falling to
1V to GATEH rising to 1V
10
20
40
ns
GATEH low to GATEL high
delay
BOOST = VCCP = 7V, SW = PGND =
0V, measure time from GATEH falling to
1V to GATEL rising to 1V
10
20
40
ns
Disable Pull-Down Resistance
Ta=25
oC Note 1
80
130
kΩ



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