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IR3513Z Datasheet(PDF) 8 Page - International Rectifier |
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IR3513Z Datasheet(HTML) 8 Page - International Rectifier |
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8 / 36 page ![]() IR3513Z Page 8 May 11, 2009 PARAMETER TEST CONDITION MIN TYP MAX UNIT Open Sense Line Detection Sense Line Detection Active Comparator Threshold Voltage 150 200 250 mV Sense Line Detection Active Comparator Offset Voltage V(VOUT) < [V(VOSEN+) – V(LGND)] / 2 40 60 90 mV VOSEN+ Open Sense Line Comparator Threshold Compare to V(VCCL) 87.5 90 92.5 % VOSEN- Open Sense Line Comparator Threshold 0.36 0.40 0.44 V Sense Lines Detection Source Currents V(VOUT) = 100mv 250 500 750 uA VCCL Regulator Amplifier Reference Feedback Voltage 1.15 1.19 1.23 V VCCLFB Bias Current -1 0 1 uA VCCLDRV Sink Current 10 30 mA UVLO Start Threshold Compare to V(VCCL) 90 94 98 % UVLO Stop Threshold Compare to V(VCCL) 82 86 90 % Hysteresis Compare to V(VCCL) 7.0 8.5 9.5 % Gate Drivers GATEH Source Resistance BOOST – SW = 7V. Note 1 1.0 2.5 Ω GATEH Sink Resistance BOOST – SW = 7V. Note 1 1.0 2.5 Ω GATEL Source Resistance VCCP – PGND = 7V. Note 1 1.0 2.5 Ω GATEL Sink Resistance VCCP – PGND = 7V. Note 1 0.4 1.0 Ω GATEH Source Current BOOST=7V,GATEH=2.5V,SW=0V. Note 1 2.0 A GATEH Sink Current BOOST=7V,GATEH=2.5V,SW=0V. Note 1 2.0 A GATEL Source Current VCCP=7V, GATEL=2.5V, PGND=0V Note 1 2.0 A GATEL Sink Current VCCP=7V, GATEL=2.5V, PGND=0V Note 1 4.0 A GATEH Rise Time BOOST – SW = 7V, measure 1V to 4V transition time 5 10 ns GATEH Fall Time BOOST - SW = 7V, measure 4V to 1V transition time 5 10 ns GATEL Rise Time VCCP – PGND = 7V, Measure 1V to 4V transition time 10 20 ns GATEL Fall Time VCCP – PGND = 7V, Measure 4V to 1V transition time 5 10 ns GATEL low to GATEH high delay BOOST = VCCP = 7V, SW = PGND = 0V, measure time from GATEL falling to 1V to GATEH rising to 1V 10 20 40 ns GATEH low to GATEL high delay BOOST = VCCP = 7V, SW = PGND = 0V, measure time from GATEH falling to 1V to GATEL rising to 1V 10 20 40 ns Disable Pull-Down Resistance Ta=25 oC Note 1 80 130 kΩ |
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