AFE030 datasheet(5/58 Pages) TI1

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AFE030

www.ti.com

SBOS588A

– DECEMBER 2011 – REVISED DECEMBER 2011

ELECTRICAL CHARACTERISTICS: Power Amplifier (PA)

At TJ = +25°C, PA_VS = 16 V, VAVDD = VDVDD = 3.3 V, and PA_ISET (pin 46) connected to ground, unless otherwise noted.

AFE030

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNIT

INPUT

Input voltage range

GND

– 0.1

PA_VS + 0.1

Input resistance

FREQUENCY RESPONSE

BW Bandwidth

ILOAD = 0

670

kHz

Slew rate

10-V step

μs

Full-power bandwidth

VOUT = 10 VPP

300

kHz

AC PSRR

f = 50 kHz

OUTPUT

IO = 300 mA, sourcing

0.3

From PA_VS

IO = 1.0 A, sourcing

1.5

Voltage output

swing

IO = 300 mA, sinking

0.3

From PA_Gnd

IO = 1.0 A, sinking

1.5

PA_ISET (pin 46) connected to

Maximum continuous current, dc

1.0

ground

Maximum peak current, ac

TJ = –40°C to +125°C, f = 50 kHz

1.0

Output resistance

IO = 1.0 A

0.1

Output impedance, f = 100 kHz,

PA disabled

145 ll 120

Ω ll pF

REF1 enabled

Output current limit range

±0.4 to ±1.0

ILIM = 20 k × [1.2 V/(RSET + 15 kΩ)]

Current limit equation

Solved for RSET (current limit)

RSET = [(20 k × 1.2 V/ILIM) – 15 kΩ]

GAIN (RLOAD = 1 kΩ)

Nominal gain

6.5

V/V

Gain error

–1

0.1

Gain error drift

TJ = –40°C to +125°C

±1

ppm/

°C

TSENSE DIODE

Diode ideality factor

1.033

THERMAL SHUTDOWN

Junction temperature at shutdown

+165

°C

Hysteresis

°C

Return to normal operation

+145

°C

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