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R262 Datasheet(PDF) 2 Page - ON Semiconductor

Part # R262
Description  Wideband Voice Capture and Noise Reduction Solution
PDF  28 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

R262 Datasheet(HTML) 2 Page - ON Semiconductor

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BelaSigna R262
http://onsemi.com
2
Table 1. ABSOLUTE MAXIMUM RATINGS
Parameter
Min
Max
Unit
Power Supply (Applies on VBAT, VBATRCVR and VDDO for “Max” and for
VSSA, VSSRCVR and VSSD for “Min”) (Note 1)
−0.3
4.0
V
Digital input pin voltage
VSSD − 0.3 V
VDDO + 0.3 V
V
Operating temperature range
−40
85
°C
Storage temperature range
−40
85
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Time limit at maximum voltage must be less than 100 ms.
NOTE: Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area.
This device series incorporates ESD protection and is tested by the following methods:
− ESD Human Body Model (HBM) tested per AEC−Q100−002 (EIA/JESD22−A114)
− ESD Machine Model (MM) tested per AEC−Q100−003 (EIA/JESD22−A115)
This device series incorporates latch−up immunity and is tested in accordance with JESD78.
Electrical Performance Specifications
Table 2. ELECTRICAL CHARACTERISTICS (The typical parameters in Table 2 were measured at 20°C with a clean
3.3 V supply voltage (unless noted differently). Parameters marked as screened are tested on each chip. Other parameters are qualified
for all process corners but not tested on every part.)
Parameter
Symbol
Test Conditions / Notes
Min
Typ
Max
Unit
Screened
OVERALL
Supply voltage
VBAT
1.65
3.3
3.63
V
Maximum rise time
Between 0 V and 1.8 V
10
ms
Average current consumption
Active mode, VBAT = 3.3 V,
EXT_CLK = 2.048 MHz
16.0
16.5
17.0
mA
Bypass mode, VBAT = 3.3 V,
EXT_CLK = 2.048 MHz
16.0
16.5
17.0
mA
Bypass mode, VBAT = 3.3 V,
Internal clock
2.7
2.8
2.9
mA
Sleep mode, VBAT = 3.3 V
39
40
mA
Peak active current
VBAT = 3.63 V
19
21
mA
VREG (1 mF External Capacitor)
Output voltage
VREG
Without load, or with micro-
phone attached (0 to 200 mA)
0.95
1.00
1.05
V
l
PSRR
@ 1 kHz
40
dB
Load regulation
@ 2 mA
5
20
mV/mA
Load current
2
mA
Line regulation
−1
5
mV/V
VDDA (1 mF External Capacitor on VDDA + 100 nF External Capacitor on CAP0/CAP1)
Output voltage
VDDA
Unloaded with VREG = 1 V
1.8
2.0
2.1
V
l
PSRR
@ 1 kHz
45
dB
Load regulation
@ 1 mA
100
140
mV/mA
Load current
1
mA
Line regulation
2
mV/V
VDDD (1 mF External Capacitor)
Output voltage
VDDD
1.62
1.70
1.98
V
l



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