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AD6426 Datasheet(PDF) 32 Page - Analog Devices

Part # AD6426
Description  Enhanced GSM Processor
PDF  50 Pages
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Manufacturer  AD [Analog Devices]
Direct Link  http://www.analog.com
Logo AD - Analog Devices

AD6426 Datasheet(HTML) 32 Page - Analog Devices

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Preliminary Technical Information
AD6426
This Information applies to a product under development. Its characteristics and specifications are subject to change without notice. Analog Devices assumes no
obligation regarding future manufacture unless otherwise agreed to in writing. No responsibility is assumed by Analog Devices for its use; nor for any
infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent
rights of Analog Devices.
Revision Preliminary 2.3 (June 9, ´98)
- 32 -
Confidential Information
SPECIFICATIONS
General
Parameter
Min
Typ
Max
Units
Comments
TA , Ambient Operating Temperature
-25
+85
°C
VDD , Supply Voltage
2.4
3.3
Volt
IDD , Supply Current (Idle Mode)
TBD
mA
@ VDD = 3.0 V
IDD , Supply Current (Talk Mode)
TBD
mA
@ VDD = 3.0 V
fCLKIN , Clock Input Frequency
13
MHz
VCLKIN , Clock Input Voltage
0.250
VPP
sine wave, ac-coupled
RCLKIN, Clock Input Resistance (see Note)
19.5
k
sine wave, ac-coupled
Logic Inputs
VIH , Input High Voltage
VDD - 0.8
Volt
VIL , Input Low Voltage
0.8
Volt
IIH , IIL Input Current
-10
10
µA
CIN , Input Capacitance
TBD
pF
Logic Outputs
VOH , Output High Voltage
VDD - 0.4
VOL , Output Low Voltage
0.4
IOZL , Low Level Output 3-State Leakage Current
-10
10
µA
IOZH , High Level Output 3-State Leakage Current
-10
10
µA
Note:
The input impedance of the clock buffer is a function of the voltage and waveform of the clock input signal. For sinusoidal input
signals the typical input impedance can be calculated by: RIN [k
Ω] = V
CLKIN [VPP]
× 78
ABSOLUTE MAXIMUM RATINGS
VDD to GND ............................................. -0.3V to + TBD V
Digital I/O Voltage to GND ................... -0.3V to VDD + 0.3V
Operating Temperature Range ........................ -25°C to +85°C
LQFP Package
Storage Temperature Range .......................... -65°C to +150°C
Maximum Junction Temperature ................................ +150°C
QJA Thermal Impedance..............................................28°C/W
Lead temperature, Soldering
Vapor Phase (60 sec)........................................... +215°C
Infrared (15 sec).................................................. +220°C
PBGA Package
Storage Temperature Range .......................... -65°C to +150°C
Maximum Junction Temperature ................................ +150°C
QJA Thermal Impedance..............................................30°C/W
Lead temperature, Soldering
Vapor Phase (60 sec)........................................... +215°C
Infrared (15 sec).................................................. +220°C
Note:
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those listed in the operational sections is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability. TA= +25°C unless otherwise stated.
ESD SUSCEPTIBILITY
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 volts, which
readily accumulate on the human body and on test equipment, can discharge without detection.
Although this device features proprietary ESD protection circuitry, permanent damage may still occur
on this device if it is subjected to high energy electrostatic discharges. Therefore, proper precautions
are recommended to avoid any performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE



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