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SO16N Datasheet(PDF) 14 Page - STMicroelectronics |
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SO16N Datasheet(HTML) 14 Page - STMicroelectronics |
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14 / 51 page ![]() Electrical characteristics L6566BH 14/51 Doc ID 16610 Rev 2 VCOMPLO Lower clamp voltage ISOURCE = -1 mA 2.0 V VCOMPSH Linear dynamics upper limit (1) V VFF = 0 V 4.855.2 V ICOMP Max. source current VCOMP = 3.3 V 320 400 480 µA RCOMP Dynamic resistance VCOMP = 2.6 to 4.8 V 25 k Ω VCOMPBM Burst-mode threshold (1) 2.52 2.65 2.78 V (1) MODE/SC = open 2.7 2.85 3 Hys Burst-mode hysteresis 20 mV ICLAMPL Lower clamp capability VCOMP = 2 V -3.5 -1.5 mA VCOMPOFF Disable threshold Voltage falling 1.4 V VCOMPO Level for lower UVLO OFF threshold (voltage falling) (4) 2.61 2.75 2.89 V (4) MODE/SC = open 3.02 3.15 3.28 VCOMPL Level for higher UVLO OFF threshold (voltage rising) (4) 2.93.053.2 V (4) MODE/SC = open 3.41 3.55 3.69 Zero-current detector/overvoltage protection VZCDH Upper clamp voltage IZCD = 3 mA 5.4 5.7 6 V VZCDL Lower clamp voltage IZCD = - 3 mA -0.4 V VZCDA Arming voltage (1) Positive-going edge 85 100 115 mV VZCDT Triggering voltage (1) Negative-going edge 30 50 70 mV IZCD Internal pull-up VCOMP < VCOMPSH -1 µA VZCD < 2 V, VCOMP = VCOMPHI -130 -100 -70 IZCDsrc Source current capability VZCD = VZCDL -3 mA IZCDsnk Sink current capability VZCD = VZCDH 3mA TBLANK1 Turn-on inhibit time After gate-drive going low 2.5 µs VZCDth OVP threshold 4.85 5 5.15 V TBLANK2 OVP strobe delay After gate-drive going low 2 µs Latched shutdown function IOTP Input bias current VDIS = 0 to VOTP -1 µA VOTP Disable threshold (1) 4.32 4.5 4.68 V Thermal shutdown Vth Shutdown threshold 160 ° C Hys Hysteresis 50 ° C External oscillator (frequency modulation) fFMOD Oscillation frequency CMOD = 0.1 µF 600 750 900 Hz --- Usable frequency range 0.05 15 kHz Table 4. Electrical characteristics (continued) Symbol Parameter Test condition Min. Typ. Max. Unit |
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