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AN4242 Datasheet(PDF) 10 Page - STMicroelectronics

Part # AN4242
Description  New generation of 650 V SiC diodes
PDF  26 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

AN4242 Datasheet(HTML) 10 Page - STMicroelectronics

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Forward thermal runaway
AN4242
10/26
DocID024196 Rev 1
Equation 19
Due to the exponential function in the expression of Tj(t), if B · Rth - 1 > 0 then the limit
leads to the diode destruction if the current I0 is not interrupted.
Thus, the stability condition is given by:
Equation 20
so
Equation 21
The detailed expression gives:
Equation 22
Note that the limit of thermal runaway can be directly found by:
Equation 23
Numerical application:
An application with an average current I0 = 6 A using the STPSC6H065 is considered here.
The typical forward voltage curve versus forward current of the STPS6H065 datasheet is
calculated between 3 A and 9 A and between 25 °C and 150 °C:
Vt0150°C = 0.85 V, Rd150°C = 0.175 , Vt0 = -800 µV/°C, Rd = 600 µ/°C.
So, the “B coefficient” is equal at 0.017 W/°C, and the critical Rth, beyond which the thermal
runaway is reached, is Rth > 59.5 °C/W.
Considering the Rth(j-a) of the TO-220 package in air to be around 60 °C/W, the stability
condition will not be respected since B · Rth(j-a) - 1 > 0 and thus the diode cannot be used
without a heatsink for this value of current.
The diode must be mounted on its own heatsink, in choosing the Rth value checking
B · Rth(j-a) - 1 < 0 and respecting Tj < Tjmax. In this case of a stable condition,
if Tj targeted is 125 °C with Tamb = 40 °C, the heatsink should be chosen for an Rth(j-a) value
equal to 7.45 °C/W.
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T (t) =
j
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lim
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B · R
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th



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