AN4242 datasheet(16/26 Pages) STMICROELECTRONICS

16 / 26 page

New 650 V JBS SiC diodes

AN4242

16/26

DocID024196 Rev 1

Figure 13. Result of IFSM PSpice simulation: comparison between 6 A / 650 V SiC 2nd

generation (STPSC6H065D) and 6 A /600 V SiC 1st generation (STPSC606D)

3.2.3

IFSM datasheet comparison between SiC G2 and SiC G1

The non-repetitive IFSM curves versus pulse duration presented in Figure 14 come from the

datasheet of the STPSC606 and the STPSC6H065. The graph, based on measurements,

shows the improvement of the surge current capability with the second generation. Thanks

to the JBS structure, the IFSM values are more than doubled.

Figure 14. Non repetitive IFSM versus tp comparison between 6 A SiC 1st generation

and 6 A SiC 2nd generation

100

200

300

400

Tj (°C)

1G > 400 °C

thermal runaway

phenomenon

200 °C

F typ 2G

F typ 1G

IFSM = 42 A @ Tc = 25 °C

IFSM (A)

VF (V)

Time (ms)

1·E-05

1·E-04

1·E-03

1·E+03

1·E-02

1·E+02

1·E+01

IFSM (A)

tp (s)

STPSC6H065

2nd generation

STPSC606

1st generation

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