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AN4242 Datasheet(PDF) 11 Page - STMicroelectronics

Part # AN4242
Description  New generation of 650 V SiC diodes
PDF  26 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

AN4242 Datasheet(HTML) 11 Page - STMicroelectronics

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DocID024196 Rev 1
11/26
AN4242
Forward thermal runaway
2.2
Thermal runaway risk in transient phase
The thermal runaway phenomenon can easily be observed with the short IFSM test
waveform by sensing the forward voltage drop. IFSM is defined by a sine-wave of 10 ms
shown in Figure 7 and is described in the datasheet as the non-repetitive maximum surge
forward current.
Figure 7. Thermal runaway phenomenon during an IFSM-test waveform
In standard applications, the current waveforms are either shorter or longer and more
complex due to the switching frequency. However the IFSM parameter stays a reference that
reflects the capability of the diode to sustain a surge current.
In an SMPS, during the transient phases such as the start-up phase, a power line drop-out,
a lightning surge or a short circuit, experience shows that some high surge current stresses
are applied to the diode. Examples are shown in Figure 8.
Figure 8. Inrush current proportional to dVout/dt during a start-up phase and a
power line drop-out
Unlike the regular operating mode, the current stress duration is generally lower than 1 s. In
this case a thermal runaway phenomenon can be triggered and the advised limit to avoid
the destruction of the diode is the Tjmax given in the datasheet.
The estimation of Tj during these transient conditions involves the transient thermal
impedance:
IFSM =38 A
VF = 11 V
STPSC606D
2 ms/div
2 V/div
10 A/div
5 ms / Div
5 A / Div
100 V / Div
VOUT
ILine
IdSiC
IIn
nrru
us
sh
h
c
cu
urrrre
en
ntt
VOUT
Idbypass
VOUT
IdSiC
200 ms / Div
5 A / Div
100V / Div
20 ms / Div
INTC=Idbypass
IdSiC
IIn
nrru
us
sh
h
c
cu
urrrre
en
ntt



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