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AN4242 Datasheet(PDF) 11 Page - STMicroelectronics |
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AN4242 Datasheet(HTML) 11 Page - STMicroelectronics |
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11 / 26 page ![]() DocID024196 Rev 1 11/26 AN4242 Forward thermal runaway 2.2 Thermal runaway risk in transient phase The thermal runaway phenomenon can easily be observed with the short IFSM test waveform by sensing the forward voltage drop. IFSM is defined by a sine-wave of 10 ms shown in Figure 7 and is described in the datasheet as the non-repetitive maximum surge forward current. Figure 7. Thermal runaway phenomenon during an IFSM-test waveform In standard applications, the current waveforms are either shorter or longer and more complex due to the switching frequency. However the IFSM parameter stays a reference that reflects the capability of the diode to sustain a surge current. In an SMPS, during the transient phases such as the start-up phase, a power line drop-out, a lightning surge or a short circuit, experience shows that some high surge current stresses are applied to the diode. Examples are shown in Figure 8. Figure 8. Inrush current proportional to dVout/dt during a start-up phase and a power line drop-out Unlike the regular operating mode, the current stress duration is generally lower than 1 s. In this case a thermal runaway phenomenon can be triggered and the advised limit to avoid the destruction of the diode is the Tjmax given in the datasheet. The estimation of Tj during these transient conditions involves the transient thermal impedance: IFSM =38 A VF = 11 V STPSC606D 2 ms/div 2 V/div 10 A/div 5 ms / Div 5 A / Div 100 V / Div VOUT ILine IdSiC IIn nrru us sh h c cu urrrre en ntt VOUT Idbypass VOUT IdSiC 200 ms / Div 5 A / Div 100V / Div 20 ms / Div INTC=Idbypass IdSiC IIn nrru us sh h c cu urrrre en ntt |
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