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AN4242 Datasheet(PDF) 18 Page - STMicroelectronics

Part # AN4242
Description  New generation of 650 V SiC diodes
PDF  26 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

AN4242 Datasheet(HTML) 18 Page - STMicroelectronics

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New 650 V JBS SiC diodes
AN4242
18/26
DocID024196 Rev 1
The characterization of the recovery charges for a given junction temperature versus the
forward current allows the determination of the no recovery charges area.
3.3.2
No recovery charge area
Figure 16 illustrates the no-recovery-charges area for a 6 A SiC 2nd generation diode in the
reference plan of forward current versus junction temperature. ST’s STPSC6H065D SiC G2
was designed to be used without any recovery charges up to 2 · IF(AV) at 150 °C or again
3· IF(AV) at 100°C. The 2 oscilloscope traces illustrate the switch-off behavior of the diodes
at IF = 12 A and IF = 18 A for Tj = 150 °C. At IF = 12 A, the behavior at 25°C and 150°C is
stable confirming the absence of recovery charges. At IF = 18 A, recovery charges start to
appear between 100 °C and 125 °C and become more significant at 150 °C. The same
characterization was made on a sample of diodes featuring another JBS technology
(corresponding to the dotted lines in Figure 15). This other JBS trade-off presents a larger
no-recovery-charge area but compromises on the forward voltage drop, that is higher at
high current levels.
Figure 16. Comparison of no recovery charge area between ST’s 6 A SiC 2nd
generation diode and another JBS technology
In a PFC, the peak current flowing through the diode can be estimated by:
Equation 25
For example, in an 800 W server application with a PFC working at Vin(min) = 90 V AC and
an efficiency of 90%, the peak current reaches 14 A (it’s the same for a 1600 W PFC
application working at 180 V AC). In this application the choice of a 6 A SiC G2 working with
a Tj around 125 °C is adapted.
STPSC6H065D
Other JBS
technology
No recovery
charge area
6 A SiC 2nd generation
diode working area
IF (A)
Tj (°C)
35
30
25
20
15
10
5
0
0
25
50
75
100
125
150
175
200
I=
peakdiode
Ö2 · Pout
Vin(min)
·
rms
h



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