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AN4242 Datasheet(PDF) 18 Page - STMicroelectronics |
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AN4242 Datasheet(HTML) 18 Page - STMicroelectronics |
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18 / 26 page ![]() New 650 V JBS SiC diodes AN4242 18/26 DocID024196 Rev 1 The characterization of the recovery charges for a given junction temperature versus the forward current allows the determination of the no recovery charges area. 3.3.2 No recovery charge area Figure 16 illustrates the no-recovery-charges area for a 6 A SiC 2nd generation diode in the reference plan of forward current versus junction temperature. ST’s STPSC6H065D SiC G2 was designed to be used without any recovery charges up to 2 · IF(AV) at 150 °C or again 3· IF(AV) at 100°C. The 2 oscilloscope traces illustrate the switch-off behavior of the diodes at IF = 12 A and IF = 18 A for Tj = 150 °C. At IF = 12 A, the behavior at 25°C and 150°C is stable confirming the absence of recovery charges. At IF = 18 A, recovery charges start to appear between 100 °C and 125 °C and become more significant at 150 °C. The same characterization was made on a sample of diodes featuring another JBS technology (corresponding to the dotted lines in Figure 15). This other JBS trade-off presents a larger no-recovery-charge area but compromises on the forward voltage drop, that is higher at high current levels. Figure 16. Comparison of no recovery charge area between ST’s 6 A SiC 2nd generation diode and another JBS technology In a PFC, the peak current flowing through the diode can be estimated by: Equation 25 For example, in an 800 W server application with a PFC working at Vin(min) = 90 V AC and an efficiency of 90%, the peak current reaches 14 A (it’s the same for a 1600 W PFC application working at 180 V AC). In this application the choice of a 6 A SiC G2 working with a Tj around 125 °C is adapted. STPSC6H065D Other JBS technology No recovery charge area 6 A SiC 2nd generation diode working area IF (A) Tj (°C) 35 30 25 20 15 10 5 0 0 25 50 75 100 125 150 175 200 I= peakdiode Ö2 · Pout Vin(min) · rms h |
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