New 650 V JBS SiC diodes

AN4242

20/26

DocID024196 Rev 1

A second electro-thermal simulation was done during an SMPS start-up phase (Figure 18).

It demonstrates once again the interest of correctly dimensioning the JBS structure.

between ST’s 6 A SiC 2nd generation and another 6 A JBS technology

contributes to the robustness of the ST’s product in the application.

Time (ms)

0A

20 A

40 A

60 A

5

10

15

20

25

30

120

160

200

240

215 °C

Tjother 650 V SiC JBS technology

Tj STPSC6H065

175°C

Tj (°C)

1000 W PFC start-up PSpice simulation 90 V, 70 kHz,

Cout = 600 µF, L = 270 µH, Tc = 125 °C

IdSiC