Forward thermal runaway

AN4242

12/26

DocID024196 Rev 1

Equation 24

In most cases, the complexity of the current waveform implies that the above equation is

solved with help of an electro-thermal model as shown in Figure 12.

To push back the thermal runaway limit and improve the capability of SiC diodes to

withstand high current surges, a second generation of SiC diode has been developed by

STMicroelectronics using a combination of a Schottky diode and a PN diode. This new

technology is usually called Junction Barrier Schottky (JBS).

D

¢¢

tt

T(t) = P(t) · Zth (t) =

P(t)Zth (t - )d

ò

0

t