AN4242 datasheet(4/26 Pages) STMICROELECTRONICS

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AN4242 Datasheet(PDF) 4 Page - STMicroelectronics

Part #	AN4242

Description	New generation of 650 V SiC diodes

PDF	26 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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4 / 26 page

Features of the SiC diodes

AN4242

4/26

DocID024196 Rev 1

Figure 2. Qc measurement of a 6 A SiC diode at IF = 1 A, Tj = 25 °C, VR = 400 V,

dI/dt = 50 A/µs

To avoid false readings due to some measurement inaccuracy, a theoretical approach is

preferred. The quantity of charge Q during a certain period of time [0-t0] is delimited by the

reverse voltage variation V across the junction capacitance Cj between 0 and VR and is

given by the following formulas:

Equation 1

with

Equation 2

Qc = 19.6 nc

Qc = 24.2 nC

Qc=20.4nc

Voltage probe

A. With voltage probe

B. Without voltage probe

C. I = 2 A, dI/dt = 200 A/µs

dQ =

i(t) dt

i(t) = Cj

dV(t)

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