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KAI-4021 Datasheet(PDF) 17 Page - ON Semiconductor

Part # KAI-4021
Description  INTERLINE CCD IMAGE SENSOR
PDF  56 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

KAI-4021 Datasheet(HTML) 17 Page - ON Semiconductor

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KAI-4021 Image Sensor
www.truesenseimaging.com
Revision 1.1 PS-0014 Pg 17
Imaging Performance
TYPICAL OPERATIONAL CONDITIONS
Unless otherwise noted, the Imaging Performance Specifications are measured using the following conditions.
Description
Condition
Notes
Frame Time
538 msec
1
Horizontal Clock Frequency
10 MHz
Light Source
Continuous red, green and blue illumination centered at 450, 530 and 650
nm
2,3
Operation
Nominal operating voltages and timing
Notes:
1.
Electronic shutter is not used. Integration time equals frame time.
2.
LEDs used: Blue: Nichia NLPB500, Green: Nichia NSPG500S and Red: HP HLMP-8115.
3.
For monochrome sensor, only green LED used.
SPECIFICATIONS
All Configurations
Description
Symbol
Min.
Nom.
Max.
Units
Sampling
Plan
Temperature
Tested At (°C)
Notes
Dark Center Non-Uniformity
n/a
n/a
2
mVrms
Die
27, 40
Dark Global Non-Uniformity
n/a
n/a
5.0
mVpp
Die
27, 40
Global Non-Uniformity
n/a
2.5
5.0
%rms
Die
27, 40
1
Global Peak to Peak Non-Uniformity
PRNU
n/a
10
20
%pp
Die
27, 40
1
Center Non-Uniformity
n/a
1.0
2.0
%rms
Die
27, 40
1
Maximum Photoresponse Nonlinearity
NL
n/a
2
%
Design
2, 3
Maximum Gain Difference Between
Outputs
G
n/a
10
%
Design
2, 3
Max. Signal Error due to Nonlinearity
Dif.
NL
n/a
1
%
Design
2, 3
Horizontal CCD Charge Capacity
HNe
100
ke
-
Design
Vertical CCD Charge Capacity
VNe
50
60
ke
-
Die
Photodiode Charge Capacity
PNe
38
40
ke
-
Die
Horizontal CCD Charge Transfer
Efficiency
HCTE
0.99999
n/a
Design
Vertical CCD Charge Transfer Efficiency
VCTE
0.99999
n/a
Design
Photodiode Dark Current
Ipd
n/a
40
350
e/p/s
Die
Photodiode Dark Current
Ipd
n/a
0.01
0.1
nA/cm
2
Die
Vertical CCD Dark Current
Ivd
n/a
400
1711
e/p/s
Die
Vertical CCD Dark Current
Ivd
n/a
0.12
0.5
nA/cm
2
Die
Image Lag
Lag
n/a
<10
50
e
-
Design
Antiblooming Factor
Xab
100
300
n/a
Vertical Smear
Smr
n/a
-80
-75
dB
Total Noise
ne-T
12
e
-rms
Design
4
Total Noise
ne-T
25
e
-rms
Design
5
Dynamic Range
DR
60
dB
Design
5, 6
Output Amplifier DC Offset
Vodc
4
8.5
14
V
Die
Output Amplifier Bandwidth
F-3db
140
MHz
Design
Output Amplifier Impedance
ROUT
100
130
200
Ohms
Die
Output Amplifier Sensitivity
V/N
31
μV/e
-
Design



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