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70T653MS12BCGI Datasheet(PDF) 6 Page - Integrated Device Technology

Part # 70T653MS12BCGI
Description  HIGH-SPEED 2.5V 512K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM
PDF  24 Pages
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Manufacturer  IDT [Integrated Device Technology]
Direct Link  http://www.idt.com
Logo IDT - Integrated Device Technology

70T653MS12BCGI Datasheet(HTML) 6 Page - Integrated Device Technology

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IDT70T653M
High-Speed 2.5V 512K x 36 Asynchronous Dual-Port Static RAM
Industrial and Commercial Temperature Ranges
6
RecommendedOperating
Temperature and Supply Voltage(1)
NOTE:
1. This is the parameter TA. This is the "instant on" case temperature.
Grade
Ambient
Temperature
GND
VDD
Commercial
0OC to +70OC0V
2.5V
+ 100mV
Industrial
-40OC to +85OC0V
2.5V
+ 100mV
5679 tbl 04
NOTES:
1. These parameters are determined by device characterization, but are not
production tested.
2. COUT also references CI/O.
Capacitance(1)
(TA = +25°C, F = 1.0MHZ) PQFP ONLY
Symbol
Parameter
Conditions
Max.
Unit
CIN
Input Capacitance
VIN = 0V
15
pF
COUT(2)
Output Capacitance
VOUT = 0V
10.5
pF
5679 tbl 08
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS
may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those
indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect
reliability.
2. This is a steady-state DC parameter that applies after the power supply has
reached its nominal operating value. Power sequencing is not necessary;
however, the voltage on any Input or I/O pin cannot exceed VDDQ during power
supply ramp up.
3. Ambient Temperature under DC Bias. No AC Conditions. Chip Deselected.
Recommended DC Operating
Conditions with VDDQ at 2.5V
Symbol
Parameter
Min.
Typ.
Max.
Unit
VDD
Core Supply Voltage
2.4
2.5
2.6
V
VDDQ
I/O Supply Voltage(3)
2.4
2.5
2.6
V
VSS
Ground
0
0
0
V
VIH
Input High Volltage
(Address, Control &
Data I/O Inputs)(3)
1.7
____
VDDQ + 100mV(2)
V
VIH
Input High Voltage _
JTAG
1.7
____
VDD + 100mV(2)
V
VIH
Input High Voltage -
ZZ, OPT
VDD - 0.2V
____
VDD + 100mV(2)
V
VIL
Input Low Voltage
-0.3(1)
____
0.7
V
VIL
Input Low Voltage -
ZZ, OPT
-0.3(1)
____
0.2
V
5679 tbl 05
NOTES:
1. VIL (min.) = -1.0V for pulse width less than tRC/2 or 5ns, whichever is less.
2. VIH (max.) = VDDQ + 1.0V for pulse width less than tRC/2 or 5ns, whichever is
less.
3. To select operation at 2.5V levels on the I/Os and controls of a given port, the
OPT pin for that port must be set to VSS(0V), and VDDQX for that port must be
supplied as indicated above.
Absolute Maximum Ratings(1)
Symbol
Rating
Commercial
& Industrial
Unit
VTERM
(VDD)
VDD Terminal Voltage
with Respect to GND
-0.5 to 3.6
V
VTERM(2)
(VDDQ)
VDDQ Terminal Voltage
with Respect to GND
-0.3 to VDDQ + 0.3
V
VTERM(2)
(INPUTS and I/O's)
Input and I/O Terminal
Voltage with Respect to GND
-0.3 to VDDQ + 0.3
V
TBIAS(3)
Temperature
Under Bias
-55 to +125
o
C
TSTG
Storage
Temperature
-65 to +150
o
C
TJN
Junction Temperature
+150
o
C
IOUT(For VDDQ = 3.3V) DC Output Current
50
mA
IOUT(For VDDQ = 2.5V) DC Output Current
40
mA
5679 tbl 07
NOTES:
1. VIL (min.) = -1.0V for pulse width less than tRC/2 or 5ns, whichever is less.
2. VIH (max.) = VDDQ + 1.0V for pulse width less than tRC/2 or 5ns, whichever is
less.
3. To select operation at 3.3V levels on the I/Os and controls of a given port, the
OPT pin for that port must be set to VDD (2.5V), and VDDQX for that port must be
supplied as indicated above.
Recommended DC Operating
Conditions with VDDQ at 3.3V
Symbol
Parameter
Min.
Typ.
Max.
Unit
VDD
Core Supply Voltage
2.4
2.5
2.6
V
VDDQ
I/O Supply Voltage(3)
3.15
3.3
3.45
V
VSS
Ground
0
0
0
V
VIH
Input High Voltage
(Address, Control
&Data I/O Inputs)(3)
2.0
____
VDDQ + 150mV(2)
V
VIH
Input High Voltage _
JTAG
1.7
____
VDD + 100mV(2)
V
VIH
Input High Voltage -
ZZ, OPT
VDD - 0.2V
____
VDD + 100mV(2)
V
VIL
Input Low Voltage
-0.3(1)
____
0.8
V
VIL
Input Low Voltage -
ZZ, OPT
-0.3(1)
____
0.2
V
5679 tbl 06



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